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BDW42AS

Onsemi

BDW42AS by Onsemi

The Onsemi BDW42AS is a NPN Power BJT with Darlington configuration, ideal for switching applications. With VCEsat of 3V and hFE of 1000, it can handle up to 15A IC and dissipate 85W power. Operating b/w -55 to 150 °C, it has a max VCE of 100V and fT of 4MHz.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

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Digiode

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TANS Electronics

Latvia . 6,246 parts In-Stock

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SupplyDigital Components

Austria . 5,378 parts In-Stock

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Northwest PG Solutions

USA . 1,654 parts In-Stock

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Problanco Electronics

Mexico . 1,313 parts In-Stock

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Kulean Microsystems

USA . 923 parts In-Stock

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Corphita

USA . 456 parts In-Stock

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Corohmni

South Africa . 414 parts In-Stock

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Native Components

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UHIMA Technologies

Türkiye . 121 parts In-Stock

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Overview

Unleash the power of innovation with the BDW42AS by Onsemi. Crafted with precision and quality, this Power BJT transistor is designed to exceed expectations in switching applications. With a built-in diode and resistor, this NPN transistor offers unrivaled performance and reliability, making it a must-have for your projects. Whether you're looking to boost efficiency or enhance functionality, the BDW42AS delivers unmatched value and benefits that will elevate your designs to new heights. Trust in Onsemi for cutting-edge technology that empowers your creations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal resistance and insulation properties, making the transistor suitable for various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high efficiency and fast response times.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and the built-in diode and resistor provide added convenience and functionality.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in such scenarios.

Maximum VCEsat: 3 V

Low VCEsat value indicates minimal voltage drop when the transistor is in the on state, resulting in lower power losses and improved efficiency.

Maximum Power Dissipation (Abs): 85 W

High maximum power dissipation capability allows the transistor to handle high power levels without damage, ensuring durability and reliability.

Maximum Collector-Emitter Voltage: 100 V

Suitable for applications requiring high voltage handling capability, ensuring reliable operation in diverse circuit configurations.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency indicates fast switching speeds, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW42AS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

200 pF

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

BDW42AS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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