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BDW46

Onsemi

BDW46 by Onsemi

The Onsemi BDW46 is a PNP BJT transistor with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3V, hFE of 1000, and can handle up to 15A collector current. With a package style of flange mount and operating temperature range from -55 to 150 °C, it's suitable for high-power electronic circuits.

Median Price

$1.035

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 1,896 parts In-Stock

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Digiode

USA . 533 parts In-Stock

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Bristol Electronics

USA . 350 parts In-Stock

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$1.035

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$0.966

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350

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ECAB

Sweden . 170 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 46 parts In-Stock

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LittleDiode

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Native Components

USA . 966 parts In-Stock

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$1.270

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Northwest PG Solutions

USA . 1,941 parts In-Stock

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$1.397

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QUARKTWIN TECHNOLOGY LTD

USA . 15,242 parts In-Stock

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Kepictronics

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Metaverse IC Inc.

Canada . 12,000 parts In-Stock

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Problanco Electronics

Mexico . 8,377 parts In-Stock

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Kulean Microsystems

USA . 4,147 parts In-Stock

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TANS Electronics

Latvia . 3,131 parts In-Stock

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SupplyDigital Components

Austria . 1,333 parts In-Stock

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UHIMA Technologies

Türkiye . 884 parts In-Stock

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Corohmni

South Africa . 262 parts In-Stock

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Corphita

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Assy Fe

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Overview

Experience the innovation and reliability of Onsemi with the BDW46 Power Bipolar Junction Transistor. This PNP Darlington transistor offers a built-in diode and resistor, making it ideal for switching applications. With a maximum VCEsat of 3V and a maximum power dissipation of 85W, this transistor provides high performance in a compact rectangular package. Trust in the quality of Onsemi's products and elevate your projects with the BDW46.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for complementary PNP-NPN configurations in various applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and enhances performance by including additional components.

Transistor Application: SWITCHING

Optimized for switching operations, providing efficient performance in controlling electrical circuits.

Maximum VCEsat: 3 V

Low saturation voltage minimizes power loss and improves efficiency in switching applications.

Package Shape: RECTANGULAR

Allows for easy mounting and integration within circuit designs.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and secure connection to circuit boards.

Maximum Power Dissipation (Abs): 85 W

Can handle high power levels without overheating, ensuring reliable operation.

Package Style (Meter): FLANGE MOUNT

Enables secure mounting and heat dissipation for enhanced performance.

Minimum DC Current Gain (hFE): 1000

High current gain allows for efficient amplification in various applications.

Maximum Operating Temperature: 150 °C

Withstands high temperatures for reliable operation in demanding environments.

Maximum Collector-Base Capacitance: 300 pF

Low capacitance minimizes signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 80 V

Can handle high voltage levels, making it suitable for a range of applications.

Transistor Element Material: SILICON

High-quality material that ensures reliability and high performance.

Minimum Operating Temperature: -55 °C

Can operate in extreme cold conditions without compromising performance.

Maximum Collector Current (IC): 15 A

High current rating allows for handling large electrical loads.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides a reliable connection and prevents oxidation of terminals.

Terminal Position: SINGLE

Simplified design with a single terminal position for ease of use.

Case Connection: COLLECTOR

Specific connection for the collector terminal, ensuring proper functionality.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for quick and efficient soldering during manufacturing processes.

Peak Reflow Temperature °C: 240

Can withstand high reflow temperatures during soldering processes.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency enables fast switching speeds for improved performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW46 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

300 pF

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

240

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

BDW46 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-528-9127, 5961145289127, 5961-14-407-3081, 5961144073081

NIIN

145289127, 144073081

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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