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BDW42BC

Onsemi

BDW42BC by Onsemi

The Onsemi BDW42BC is a NPN Power BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3V, hFE of 1000, and can handle up to 15A collector current. With a max power dissipation of 85W and operating temperature range from -55 to 150 °C, it's suitable for high-power electronic circuits.

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Austria . 7,389 parts In-Stock

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TANS Electronics

Latvia . 3,161 parts In-Stock

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Kulean Microsystems

USA . 1,984 parts In-Stock

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Northwest PG Solutions

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Problanco Electronics

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Corphita

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Native Components

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Corohmni

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UHIMA Technologies

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Overview

Power up your projects with the BDW42BC by Onsemi, a high-quality power bipolar junction transistor perfect for switching applications. Manufactured by Onsemi, known for their top-notch components, this NPN transistor offers a Darlington configuration with a built-in diode and resistor, making it a versatile and reliable choice. With a maximum collector-emitter voltage of 100V and a maximum operating temperature of 150 °C, this transistor can handle up to 15A of current and dissipate up to 85W of power. Trust the BDW42BC to deliver exceptional performance and efficiency in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and amplification circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and built-in components for ease of use.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficiency and reliability.

Maximum VCEsat: 3 V

Low saturation voltage helps in reducing power dissipation and improving efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide stability and secure connection during installation.

Maximum Power Dissipation (Abs): 85 W

High power dissipation capability allows for handling heavy loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mounting and efficient heat dissipation.

Minimum DC Current Gain (hFE): 1000

High DC current gain ensures accurate and stable amplification in circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures reliability in various environmental conditions.

Maximum Collector-Base Capacitance: 200 pF

Low collector-base capacitance helps in reducing signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating provides safety margin for the device in different operating conditions.

Transistor Element Material: SILICON

Silicon material offers high performance, efficiency, and reliability in transistor operation.

Minimum Operating Temperature: -55 °C

Wide temperature range allows for operation in extreme cold conditions.

Maximum Collector Current (IC): 15 A

High collector current rating allows for handling large current loads without damage.

Terminal Finish: TIN LEAD

Tin-lead finish ensures good contact and reliability in terminal connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in circuits.

Case Connection: COLLECTOR

Case connection at the collector lead enhances the device's thermal performance and efficiency.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency allows for fast switching speeds and high-frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW42BC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

200 pF

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

BDW42BC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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