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BDW42

Onsemi

BDW42 by Onsemi

The Onsemi BDW42 is a NPN Power BJT with Darlington configuration, ideal for switching applications. It offers a max VCEsat of 3V and can handle up to 15A collector current. With a package style of flange mount and operating temperature range from -55 to 150 °C, it is suitable for high-power electronic circuits.

Median Price

$0.238

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 90 parts In-Stock

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-

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$0.238

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$0.197

10k+ parts

$0.176

90

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$0.238

$0.197

$0.176

Distributors (In-Stock)

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Digiode

USA . 1,768 parts In-Stock

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$0.185

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$0.185

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Vyrian

USA . 7,726 parts In-Stock

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Bristol Electronics

USA . 3,266 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,225 parts In-Stock

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Electronic Expediters

USA . 550 parts In-Stock

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550

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North Shore Components

USA . 177 parts In-Stock

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NexGen Digital

USA . 134 parts In-Stock

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Prism Electronics

USA . 63 parts In-Stock

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First Choice Components Inc.

USA . 38 parts In-Stock

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LittleDiode

UK . 22 parts In-Stock

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Beltway Electronics Company

USA . 14 parts In-Stock

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Manoshevitz Elec. Sales

Israel . 13 parts In-Stock

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ECAB

Sweden . 11 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3 parts In-Stock

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Corphita

USA . 1,503 parts In-Stock

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$0.176

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$0.176

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Corohmni

South Africa . 51 parts In-Stock

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$0.195

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Native Components

USA . 626 parts In-Stock

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$1.808

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626

$1.808

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Northwest PG Solutions

USA . 680 parts In-Stock

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$1.989

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$1.989

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Component Stockers USA

USA . 536 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 27,203 parts In-Stock

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Kepictronics

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Problanco Electronics

Mexico . 7,739 parts In-Stock

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SupplyDigital Components

Austria . 5,982 parts In-Stock

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Authorized Procurement Solutions

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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TANS Electronics

Latvia . 3,068 parts In-Stock

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UHIMA Technologies

Türkiye . 473 parts In-Stock

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Kulean Microsystems

USA . 451 parts In-Stock

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Perfect Parts

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Assy Fe

Spain . 30 parts In-Stock

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Overview

Discover the power and efficiency of the BDW42 from Onsemi, a leading manufacturer in the industry. This Power Bipolar Junction Transistor (BJT) is designed for switching applications, offering a maximum VCEsat of 3V and a maximum Collector-Emitter Voltage of 100V. With a built-in diode and resistor, this NPN transistor provides seamless functionality and high performance. Whether you're looking to enhance your electronic projects or improve your circuit designs, the BDW42 delivers unmatched quality and reliability. Upgrade your technology with this versatile component today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection against external elements and ensures durability.

Polarity or Channel Type: NPN

Commonly used in electronic circuits, making it compatible with a wide range of applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and saves space by integrating additional components.

Transistor Application: SWITCHING

Optimized for fast switching applications, improving overall performance.

Maximum VCEsat: 3 V

Low VCEsat value reduces power dissipation and improves efficiency.

Package Shape: RECTANGULAR

Allows for easy mounting and placement on circuit boards.

Terminal Form: THROUGH-HOLE

Provides secure and reliable connections in various circuit configurations.

Maximum Power Dissipation: 85 W

High power dissipation capability allows for handling large loads without overheating.

Minimum DC Current Gain (hFE): 1000

High DC current gain ensures efficient amplification in electronic circuits.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for versatility in different environments.

Maximum Collector-Base Capacitance: 200 pF

Low capacitance reduces high-frequency signal distortion in circuits.

Maximum Collector-Emitter Voltage: 100 V

High voltage handling capability for handling high voltage circuits.

Transistor Element Material: SILICON

Silicon is a commonly used material in transistors for its reliability and performance.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures functionality in extreme cold conditions.

Maximum Collector Current (IC): 15 A

High collector current rating allows for handling large current loads.

Terminal Finish: Tin/Lead (Sn/Pb)

Provides good solderability for easy assembly.

Terminal Position: SINGLE

Simplified terminal structure for easy circuit integration.

Case Connection: COLLECTOR

Clear connection point for the collector terminal.

Peak Reflow Temperature: 240 C

High peak reflow temperature capability for soldering processes.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency for fast signal switching.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW42 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

200 pF

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

240

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

BDW42 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-514-4882, 5961015144882

NIIN

015144882

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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