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BDW47G

Onsemi

BDW47G by Onsemi

BDW47G by Onsemi is a PNP power BJT with 85W max power dissipation, 100V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, this transistor has a min hFE of 250 and fT of 4MHz.

Median Price

$0.537

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 68 parts In-Stock

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Rochester

USA . 42 parts In-Stock

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$0.537

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$0.445

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$0.397

42

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$0.537

$0.445

$0.397

Distributors (In-Stock)

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Digiode

USA . 1,390 parts In-Stock

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$0.520

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$0.520

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Nova Conductors

Japan . 51 parts In-Stock

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$0.589

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Vyrian

USA . 11,603 parts In-Stock

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DigiKey Marketplace

USA . 6,827 parts In-Stock

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VNN

France . 2,847 parts In-Stock

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Pegasus Components GmbH

Germany . 1,233 parts In-Stock

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Flip Electronics

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Mil-Aero Solutions, Inc.

USA . 54 parts In-Stock

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Beckwith Electronics

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Corphita

USA . 1,666 parts In-Stock

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$0.492

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$0.492

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Corohmni

South Africa . 388 parts In-Stock

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$0.547

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388

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Argo Parts USA

USA . 4,246 parts In-Stock

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$0.589

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$0.571

4,246

$0.589

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$0.571

Continental Prestige Electronics

USA . 3,719 parts In-Stock

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$0.589

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$0.577

3,719

$0.589

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$0.577

Ampacity Inc.

Singapore . 55 parts In-Stock

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$1.010

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$1.010

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$1.932

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$1.758

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$1.584

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$1.932

$1.758

$1.584

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Microchip USA

USA . 243 parts In-Stock

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$3.710

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$3.680

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$3.670

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$3.660

243

$3.710

$3.680

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$3.660

AZTECH Wire

Italy . 896 parts In-Stock

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$4.977

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Perfect Parts

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Lixinc

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Kulean Microsystems

USA . 7,474 parts In-Stock

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A-Z Elektronik GmbH

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Problanco Electronics

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TANS Electronics

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Alle Elektronik GmbH

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UHIMA Technologies

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SupplyDigital Components

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Glotronic Ltd.

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Overview

Enhance your power electronics projects with the reliable BDW47G by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) like the BDW47G, ideal for switching applications. With a Darlington configuration, built-in diode and resistor, this PNP transistor offers seamless performance and efficiency. Its durable plastic/epoxy body and high power dissipation of 85W ensure long-lasting use. Trust in Onsemi's expertise and choose the BDW47G for your next project to experience enhanced functionality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, ideal for use in various electronic applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits where PNP transistors are required, enhancing compatibility and versatility.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration with built-in diode and resistor simplifies circuit design and saves space, making it a cost-effective solution.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers high efficiency and fast switching speeds, making it suitable for various electronic switching tasks.

Maximum Power Dissipation (Abs): 85 W

With a high maximum power dissipation of 85W, this transistor can handle high power levels without overheating, ensuring reliability in demanding applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this transistor to operate effectively in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage of 100V provides a wide margin of safety and ensures the transistor can withstand high voltage levels.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15A, this transistor can handle high current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 4 MHz

The high nominal transition frequency of 4MHz indicates fast response times and efficient performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW47G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDW47G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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