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BDW46AJ

Onsemi

BDW46AJ by Onsemi

The Onsemi BDW46AJ is a PNP Power BJT with Darlington configuration, ideal for switching applications. It features VCEsat of 3V, hFE of 1000, and IC of 15A. With a max power dissipation of 85W and operating temperature range from -55 to 150 °C, it offers reliable performance in various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,500 parts In-Stock

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Digiode

USA . 2,287 parts In-Stock

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2,287

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SupplyDigital Components

Austria . 6,172 parts In-Stock

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Kulean Microsystems

USA . 5,044 parts In-Stock

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TANS Electronics

Latvia . 1,875 parts In-Stock

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Problanco Electronics

Mexico . 1,817 parts In-Stock

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Corphita

USA . 1,081 parts In-Stock

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Northwest PG Solutions

USA . 485 parts In-Stock

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Corohmni

South Africa . 428 parts In-Stock

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UHIMA Technologies

Türkiye . 283 parts In-Stock

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Native Components

USA . 265 parts In-Stock

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Overview

Discover the power of innovation with the Onsemi BDW46AJ Power Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this PNP transistor offers superior performance in switching applications. With a maximum VCEsat of 3V and a minimum hFE of 1000, this transistor provides reliable operation and efficiency. Whether you're in the automotive, industrial or consumer electronics industry, the BDW46AJ is the ideal choice for your power management needs. Trust Onsemi for quality, reliability, and cutting-edge technology. Elevate your products with the BDW46AJ today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications and can handle larger currents, making this transistor suitable for switching purposes.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and the built-in diode and resistor add convenience and functionality to the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can quickly and efficiently control the flow of current.

Maximum VCEsat: 3 V

Low VCEsat means lower power losses and better efficiency in switching applications.

Maximum Power Dissipation: 85 W

With a high power dissipation rating, this transistor can handle high amounts of power without overheating.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage allows this transistor to be used in a wide range of circuit configurations and applications.

Nominal Transition Frequency: 4 MHz

A high transition frequency allows for fast switching speeds and high-frequency operation, making this transistor suitable for various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW46AJ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

300 pF

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

BDW46AJ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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