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BDW42BV

Onsemi

BDW42BV by Onsemi

The Onsemi BDW42BV is a NPN Power BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3V, hFE of 1000, and can handle up to 15A collector current. With a package style of flange mount and operating temperature range from -55 to 150 °C, it offers high power dissipation at 85W making it suitable for various industrial applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,120 parts In-Stock

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Vyrian

USA . 2,009 parts In-Stock

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2,009

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Native Components

USA . 735 parts In-Stock

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$1.069

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735

$1.069

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Northwest PG Solutions

USA . 306 parts In-Stock

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$1.176

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306

$1.176

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Problanco Electronics

Mexico . 7,654 parts In-Stock

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TANS Electronics

Latvia . 7,180 parts In-Stock

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7,180

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SupplyDigital Components

Austria . 5,186 parts In-Stock

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Corphita

USA . 1,640 parts In-Stock

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1,640

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Kulean Microsystems

USA . 1,033 parts In-Stock

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UHIMA Technologies

Türkiye . 243 parts In-Stock

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Corohmni

South Africa . 240 parts In-Stock

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Overview

Discover the power and efficiency of the BDW42BV by Onsemi, a top-of-the-line Power Bipolar Junction Transistor (BJT) designed for high-performance switching applications. Manufactured with precision and quality in mind, this NPN transistor boasts a durable plastic/epoxy package body material and a unique Darlington configuration with a built-in diode and resistor for seamless functionality. With a maximum VCEsat of 3V and a maximum collector-emitter voltage of 100V, this transistor offers unmatched reliability and performance. Ideal for a wide range of industrial and commercial applications, the BDW42BV provides customers with exceptional value, efficiency, and peace of mind. Elevate your projects to the next level with the BDW42BV by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile.

Maximum VCEsat: 3 V

Low VCEsat means lower power dissipation in the transistor, leading to more efficient operation.

Minimum DC Current Gain (hFE): 1000

High DC current gain allows for better amplification of signals in circuits.

Maximum Collector-Emitter Voltage: 100 V

This high voltage rating allows the transistor to be used in a variety of applications without risk of breakdown.

Maximum Collector Current (IC): 15 A

With a high collector current rating, this transistor can handle large currents in switching applications.

Nominal Transition Frequency (fT): 4 MHz

The high transition frequency allows for fast switching speeds in high frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW42BV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

200 pF

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

BDW42BV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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