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BDW46G

Onsemi

BDW46G by Onsemi

The Onsemi BDW46G is a PNP power BJT with 85W max power dissipation, 80V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. With a min hFE of 250 and operating temperature up to 150°C, it offers reliable performance in various industrial settings.

Median Price

$0.579

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 400 parts In-Stock

1+ parts

$0.579

100+ parts

$0.544

1k+ parts

$0.492

10k+ parts

$0.492

400

$0.579

$0.544

$0.492

$0.492

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 387 parts In-Stock

1+ parts

$0.550

100+ parts

-

1k+ parts

-

10k+ parts

-

387

$0.550

-

-

-

Nova Conductors

Japan . 25 parts In-Stock

1+ parts

$0.747

100+ parts

-

1k+ parts

-

10k+ parts

-

25

$0.747

-

-

-

Vyrian

USA . 3,068 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,068

-

-

-

-

VNN

France . 2,555 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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2,555

-

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 343 parts In-Stock

1+ parts

$0.492

100+ parts

-

1k+ parts

-

10k+ parts

-

343

$0.492

-

-

-

Corphita

USA . 1,202 parts In-Stock

1+ parts

$0.521

100+ parts

-

1k+ parts

-

10k+ parts

-

1,202

$0.521

-

-

-

Component Stockers USA

USA . 294 parts In-Stock

1+ parts

$0.560

100+ parts

$0.530

1k+ parts

-

10k+ parts

-

294

$0.560

$0.530

-

-

Corohmni

South Africa . 163 parts In-Stock

1+ parts

$0.579

100+ parts

-

1k+ parts

-

10k+ parts

-

163

$0.579

-

-

-

Continental Prestige Electronics

USA . 4,053 parts In-Stock

1+ parts

$0.747

100+ parts

-

1k+ parts

-

10k+ parts

$0.732

4,053

$0.747

-

-

$0.732

Argo Parts USA

USA . 2,194 parts In-Stock

1+ parts

$0.747

100+ parts

-

1k+ parts

-

10k+ parts

-

2,194

$0.747

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.747

100+ parts

$0.732

1k+ parts

-

10k+ parts

-

500

$0.747

$0.732

-

-

AZTECH Wire

Italy . 664 parts In-Stock

1+ parts

$9.503

100+ parts

-

1k+ parts

-

10k+ parts

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664

$9.503

-

-

-

Kulean Microsystems

USA . 5,863 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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5,863

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-

-

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SupplyDigital Components

Austria . 4,347 parts In-Stock

1+ parts

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4,347

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Perfect Parts

USA . 3,382 parts In-Stock

1+ parts

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100+ parts

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3,382

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TANS Electronics

Latvia . 3,200 parts In-Stock

1+ parts

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100+ parts

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3,200

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-

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Problanco Electronics

Mexico . 1,244 parts In-Stock

1+ parts

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1,244

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-

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Authorized Procurement Solutions

USA . 1,100 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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1,100

-

-

-

-

UHIMA Technologies

Türkiye . 760 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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760

-

-

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Kepictronics

USA . 500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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500

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Overview

Looking for a reliable and high-quality Power Bipolar Junction Transistor (BJT)? Look no further than the BDW46G by Onsemi! With its durable plastic/epoxy package body material and PNP polarity, this Darlington transistor is perfect for switching applications. Featuring a built-in diode and resistor, this transistor offers superior performance and efficiency. Trust Onsemi's reputation for excellence in semiconductor manufacturing to deliver a product that meets your needs. Upgrade your electronics with the BDW46G and experience the benefits of enhanced power dissipation, high collector current, and optimal temperature resistance. Elevate your projects with Onsemi's BDW46G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-power applications and this type can efficiently handle large currents and voltages.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain and the built-in diode and resistor offer extra protection and convenience in circuit design.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle rapid switching operations effectively.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and fit into various system layouts.

Maximum Power Dissipation (Abs): 85 W

With a high power dissipation rating, this transistor can handle demanding power requirements without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure mounting and heat dissipation in industrial applications.

Minimum DC Current Gain (hFE): 250

This high DC current gain ensures consistent and stable amplification in the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can perform reliably in harsh environmental conditions.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating allows for the handling of higher voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency compared to other materials.

Maximum Collector Current (IC): 15 A

With a high collector current rating, this transistor can handle large currents without damage.

Terminal Finish: TIN

Tin terminal finish provides good solderability and conductivity for reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies the connection and installation process in the circuit.

Case Connection: COLLECTOR

The case connection to the collector helps in efficient heat dissipation and electrical connectivity.

Nominal Transition Frequency (fT): 4 MHz

The high transition frequency allows for fast response and high-frequency signal amplification in the circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW46G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDW46G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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