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BDW42AN

Onsemi

BDW42AN by Onsemi

The Onsemi BDW42AN is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3V, hFE of 1000, and IC of 15A. With a package style of flange mount and operating temperature range from -55 to 150 °C, it offers high performance in various power control circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,935 parts In-Stock

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Vyrian

USA . 1,552 parts In-Stock

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TANS Electronics

Latvia . 7,576 parts In-Stock

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Kulean Microsystems

USA . 5,146 parts In-Stock

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Corphita

USA . 2,322 parts In-Stock

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Problanco Electronics

Mexico . 1,697 parts In-Stock

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UHIMA Technologies

Türkiye . 915 parts In-Stock

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915

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SupplyDigital Components

Austria . 624 parts In-Stock

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Northwest PG Solutions

USA . 500 parts In-Stock

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Corohmni

South Africa . 146 parts In-Stock

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Native Components

USA . 69 parts In-Stock

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Overview

Upgrade your power circuits with the BDW42AN by Onsemi, a high-quality Power Bipolar Junction Transistor designed to enhance the performance of your switching applications. With a Darlington configuration and built-in diode and resistor, this transistor offers maximum efficiency and reliability. Onsemi, known for its superior manufacturing standards, ensures that this product meets the highest quality and performance criteria. Whether you're working on industrial equipment, automotive systems, or consumer electronics, the BDW42AN provides unmatched value and benefits, making it the ideal choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, making this product versatile and compatible with a wide range of applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and built-in diode and resistor provide added functionality and convenience in circuit design.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle rapid changes in current and voltage, making it suitable for various electronic devices.

Maximum VCEsat: 3 V

Low saturation voltage leads to minimal power loss and high efficiency in operation.

Maximum Power Dissipation (Abs): 85 W

With a high power dissipation capacity, this transistor can handle large amounts of power without overheating or failing.

Maximum Collector-Emitter Voltage: 100 V

The high voltage rating allows for the safe operation of the transistor in applications requiring high voltages.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency compared to other materials.

Nominal Transition Frequency (fT): 4 MHz

The high transition frequency allows for fast switching speeds and high-frequency operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW42AN attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

200 pF

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

BDW42AN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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