Loading...

BDW42AF

Onsemi

BDW42AF by Onsemi

The Onsemi BDW42AF is a NPN Power BJT with Darlington configuration, ideal for switching applications. It features a max VCEsat of 3V, hFE of 1000, and can handle up to 15A collector current. With a package style of flange mount and operating temperature range from -55 to 150 °C, it's suitable for high-power electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,386 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,386

-

-

-

-

Digiode

USA . 538 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

538

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 514 parts In-Stock

1+ parts

$5.588

100+ parts

-

1k+ parts

-

10k+ parts

-

514

$5.588

-

-

-

SupplyDigital Components

Austria . 8,328 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,328

-

-

-

-

Kulean Microsystems

USA . 5,722 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,722

-

-

-

-

TANS Electronics

Latvia . 2,302 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,302

-

-

-

-

Northwest PG Solutions

USA . 1,616 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$5.476

10k+ parts

-

1,616

-

-

$5.476

-

Corphita

USA . 1,293 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,293

-

-

-

-

Problanco Electronics

Mexico . 1,135 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,135

-

-

-

-

Corohmni

South Africa . 218 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

218

-

-

-

-

UHIMA Technologies

Türkiye . 74 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

74

-

-

-

-

Overview

Discover the power of innovation with the Onsemi BDW42AF Power Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN Darlington transistor is designed for switching applications, offering a high DC current gain and low VCEsat for efficient performance. With a maximum power dissipation of 85 W and a wide operating temperature range, this transistor is reliable and versatile. Whether you're working on automotive, industrial, or consumer electronics projects, the Onsemi BDW42AF delivers quality and value to meet your needs. Elevate your designs with this high-performance component from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and durability.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications due to their high efficiency and fast response times.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and integrated diode and resistor enhance performance and simplify circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it ideal for use in power control circuits.

Maximum VCEsat: 3 V

Low VCEsat value indicates minimal voltage drop across the transistor, leading to efficient operation and reduced power dissipation.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various electronic devices and circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and make it easier to solder the transistor onto a circuit board.

Maximum Power Dissipation (Abs): 85 W

High power dissipation capability allows the transistor to handle large amounts of power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style facilitates heat dissipation and mechanical stability, making it suitable for high-power applications.

Minimum DC Current Gain (hFE): 1000

High DC current gain ensures accurate and stable amplification of the input signal.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables the transistor to function reliably in various environmental conditions.

Maximum Collector-Base Capacitance: 200 pF

Low capacitance helps minimize signal distortion and interference in high-frequency applications.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating allows the transistor to handle large voltage levels safely.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and consistency in electronic circuits.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures reliable operation even in extreme cold conditions.

Maximum Collector Current (IC): 15 A

High collector current rating allows the transistor to handle large currents without overheating.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and ensures reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and layout, making it easier to integrate the transistor into a circuit.

Case Connection: COLLECTOR

Collector connection allows for easy interfacing with other components in a circuit, facilitating electrical connections.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency indicates fast switching speed, making the transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDW42AF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

200 pF

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

3 V

Trade Compliance

BDW42AF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20