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MJB41CG

Onsemi

MJB41CG by Onsemi

MJB41CG by Onsemi is a NPN BJT transistor with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications, it has a small outline package and operates up to 150 °C. With a transition frequency of 3MHz, it's suitable for various power control circuits.

Median Price

$0.990

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 200 parts In-Stock

1+ parts

$1.060

100+ parts

$0.794

1k+ parts

-

10k+ parts

-

200

$1.060

$0.794

-

-

Mouser Electronics

USA . 438 parts In-Stock

1+ parts

$2.410

100+ parts

-

1k+ parts

-

10k+ parts

-

438

$2.410

-

-

-

DigiKey

USA . 39 parts In-Stock

1+ parts

$2.410

100+ parts

$1.056

1k+ parts

$0.778

10k+ parts

$0.677

39

$2.410

$1.056

$0.778

$0.677

Verical

USA . 1,100 parts In-Stock

1+ parts

-

100+ parts

$0.674

1k+ parts

-

10k+ parts

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1,100

-

$0.674

-

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Rochester

USA . 260 parts In-Stock

1+ parts

-

100+ parts

$0.920

1k+ parts

$0.764

10k+ parts

$0.681

260

-

$0.920

$0.764

$0.681

Arrow

USA . 200 parts In-Stock

1+ parts

-

100+ parts

$0.646

1k+ parts

$0.634

10k+ parts

-

200

-

$0.646

$0.634

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,435 parts In-Stock

1+ parts

$0.715

100+ parts

-

1k+ parts

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1,435

$0.715

-

-

-

Chip Stock

USA . 79,000 parts In-Stock

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79,000

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Vyrian

USA . 8,555 parts In-Stock

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8,555

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NAC Semi

USA . 3,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.770

10k+ parts

$1.600

3,200

-

-

$1.770

$1.600

Cyclops Electronics Ltd

UK . 463 parts In-Stock

1+ parts

-

100+ parts

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463

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Sensible Micro Corp

USA . 250 parts In-Stock

1+ parts

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100+ parts

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250

-

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ComSIT Distribution GmbH

Germany . 200 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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200

-

-

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IBS Electronics

USA . 150 parts In-Stock

1+ parts

-

100+ parts

$1.515

1k+ parts

$1.010

10k+ parts

-

150

-

$1.515

$1.010

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 55 parts In-Stock

1+ parts

$0.610

100+ parts

-

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55

$0.610

-

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Corphita

USA . 1,073 parts In-Stock

1+ parts

$0.678

100+ parts

-

1k+ parts

-

10k+ parts

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1,073

$0.678

-

-

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Continental Prestige Electronics

USA . 438 parts In-Stock

1+ parts

$1.120

100+ parts

$0.734

1k+ parts

$0.512

10k+ parts

-

438

$1.120

$0.734

$0.512

-

Perfect Parts

USA . 19,173 parts In-Stock

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19,173

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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GreenTree Electronics

Israel . 7,500 parts In-Stock

1+ parts

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7,500

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Kulean Microsystems

USA . 5,688 parts In-Stock

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5,688

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A-Z Elektronik GmbH

Germany . 5,462 parts In-Stock

1+ parts

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5,462

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SupplyDigital Components

Austria . 4,655 parts In-Stock

1+ parts

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4,655

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Problanco Electronics

Mexico . 2,415 parts In-Stock

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2,415

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TANS Electronics

Latvia . 1,708 parts In-Stock

1+ parts

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1,708

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UHIMA Technologies

Türkiye . 848 parts In-Stock

1+ parts

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848

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iodParts Technologies Inc.

India . 250 parts In-Stock

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250

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Overview

Discover the power of the MJB41CG by Onsemi, a top-quality Power Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this NPN transistor is ideal for switching applications with its high power dissipation and collector current capabilities. With a maximum operating temperature of 150 °C and a peak reflow temperature of 260°C, this transistor ensures optimal functionality even under demanding conditions. Experience the value and benefits of the MJB41CG for yourself and elevate your electronic projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and low noise operation.

Configuration: SINGLE

Single configuration transistors are easy to integrate into circuits and provide straightforward operation.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on and off, making it ideal for controlling various electronic systems.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly onto circuit boards, saving space and reducing production costs.

Maximum Power Dissipation (Abs): 65 W

With a high maximum power dissipation, this transistor can handle significant power loads without overheating or failing.

Nominal Transition Frequency (fT): 3 MHz

The high transition frequency ensures fast response times and reliable performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJB41CG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJB41CG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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