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MJB42CG

Onsemi

MJB42CG by Onsemi

MJB42CG by Onsemi is a PNP BJT transistor with 100V VCEO, 6A IC, and 65W power dissipation. Ideal for switching applications, it has a small outline package style and operates up to 150 °C. With Gull Wing terminals and silicon element material, it offers a transition frequency of 3MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 855 parts In-Stock

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Digiode

USA . 288 parts In-Stock

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288

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TANS Electronics

Latvia . 6,865 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,645 parts In-Stock

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SupplyDigital Components

Austria . 5,561 parts In-Stock

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Kulean Microsystems

USA . 4,440 parts In-Stock

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Problanco Electronics

Mexico . 2,184 parts In-Stock

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Corphita

USA . 975 parts In-Stock

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Corohmni

South Africa . 412 parts In-Stock

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UHIMA Technologies

Türkiye . 193 parts In-Stock

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Overview

Unleash the power of innovation with the MJB42CG by Onsemi, a top-tier manufacturer known for delivering superior quality products. This Power Bipolar Junction Transistor (BJT) offers unmatched performance for various applications in switching circuits. With a high power dissipation of 65W and a maximum collector-emitter voltage of 100V, this PNP transistor is a game-changer in the industry. The MJB42CG's small outline package and Gull Wing terminal form make it ideal for surface mount applications. Experience the benefits of its Silicon element material and robust design, providing customers with reliability and efficiency like never before. Elevate your projects with the MJB42CG – where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this product versatile for different circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easy to use in projects.

Transistor Application: SWITCHING

Designed for switching applications, ensuring efficient operation in tasks that require rapid switching.

Surface Mount: YES

Surface mount capability allows for easy and space-saving integration on PCBs, ideal for compact designs.

Maximum Power Dissipation (Abs): 65 W

High power dissipation capability ensures the transistor can handle heavy loads without overheating.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, the product can withstand elevated temperatures in various environments.

Maximum Collector-Emitter Voltage: 100 V

The high collector-emitter voltage rating provides flexibility and ensures stable operation in diverse circuit configurations.

Maximum Collector Current (IC): 6 A

High collector current allows for handling significant current loads, suitable for powering various components.

Nominal Transition Frequency (fT): 3 MHz

The high transition frequency enables fast switching times, critical for efficient performance in switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJB42CG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJB42CG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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