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MJB45H11

Onsemi

MJB45H11 by Onsemi

MJB45H11 by Onsemi is a PNP Power BJT with 80V VCEO, 10A IC, and 50W Ptot. Ideal for switching applications, it has a hFE of min. 40 and fT of 40MHz. The Gull Wing package is surface mountable with a max operating temp of 150 °C.

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Lifecycle Status

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Digiode

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Elcom Components

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ACDS - Activité Composants Distribution Service

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Prism Electronics

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USA . 206 parts In-Stock

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Kepictronics

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Metaverse IC Inc.

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Kulean Microsystems

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TANS Electronics

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Problanco Electronics

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Overview

Discover the power and reliability of the MJB45H11 by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. With a maximum collector-emitter voltage of 80V and a maximum collector current of 10A, this PNP transistor offers exceptional performance in a compact, surface-mount package. Onsemi's reputation for excellence ensures that the MJB45H11 delivers consistent results and long-lasting durability. From industrial automation to consumer electronics, this transistor provides value, efficiency, and versatility for a wide range of applications. Experience the benefits of superior design and engineering with the MJB45H11 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable casing for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs, enhancing compatibility and flexibility.

Configuration: SINGLE

Simplifies circuit design and implementation by having only one transistor in the package.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Enables easy and convenient installation on circuit boards, saving space and improving overall efficiency.

Package Shape: RECTANGULAR

Facilitates a compact design, ideal for space-constrained applications.

Terminal Form: GULL WING

Enhances solderability and ensures a secure connection to the circuit board.

No. of Terminals: 2

Simplifies circuit connections and reduces complexity in the overall design.

Maximum Power Dissipation (Abs): 50 W

Can handle high power dissipation, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

Compact and lightweight design that is easy to handle and integrate into circuits.

Minimum DC Current Gain (hFE): 40

Ensures a reliable and consistent amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments, ensuring stability and performance.

Maximum Collector-Emitter Voltage: 80 V

Provides a high voltage rating, suitable for various voltage requirements in circuit designs.

Transistor Element Material: SILICON

Silicon material ensures high performance and efficiency compared to other materials.

Maximum Collector Current (IC): 10 A

Capable of handling high current loads, making it suitable for power applications.

Terminal Finish: Tin/Lead (Sn80Pb20)

Provides good solderability and ensures a reliable electrical connection.

Terminal Position: SINGLE

Simplifies circuit connections and reduces the risk of errors during installation.

Case Connection: COLLECTOR

Enables easy and secure connection of the collector terminal in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a short duration, ensuring durability during soldering.

Peak Reflow Temperature °C: 235

Can withstand high reflow temperatures during the manufacturing process, ensuring reliability.

Nominal Transition Frequency (fT): 40 MHz

Provides high-frequency performance, suitable for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJB45H11 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn80Pb20)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJB45H11 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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