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MJB45H11G

Onsemi

MJB45H11G by Onsemi

MJB45H11G by Onsemi is a PNP BJT transistor with 80V VCE, 10A IC, and 50W power dissipation. Ideal for switching applications, it has a hFE of 40, operates up to 150°C, and features GULL WING terminals in a RECTANGULAR package.

Median Price

$1.645

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 34 parts In-Stock

1+ parts

$1.420

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34

$1.420

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Arrow

USA . 34 parts In-Stock

1+ parts

$1.620

100+ parts

$0.646

1k+ parts

$0.520

10k+ parts

$0.515

34

$1.620

$0.646

$0.520

$0.515

Farnell

UK . 40 parts In-Stock

1+ parts

$1.670

100+ parts

$0.565

1k+ parts

$0.454

10k+ parts

$0.445

40

$1.670

$0.565

$0.454

$0.445

Mouser Electronics

USA . 2,946 parts In-Stock

1+ parts

$2.010

100+ parts

$0.864

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-

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2,946

$2.010

$0.864

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DigiKey

USA . 194 parts In-Stock

1+ parts

$2.010

100+ parts

$0.865

1k+ parts

$0.630

10k+ parts

$0.527

194

$2.010

$0.865

$0.630

$0.527

Newark

USA . 330 parts In-Stock

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$2.070

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330

$2.070

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Rochester

USA . 67 parts In-Stock

1+ parts

-

100+ parts

$0.716

1k+ parts

$0.594

10k+ parts

$0.530

67

-

$0.716

$0.594

$0.530

Verical

USA . 34 parts In-Stock

1+ parts

-

100+ parts

$0.646

1k+ parts

$0.520

10k+ parts

$0.515

34

-

$0.646

$0.520

$0.515

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 280 parts In-Stock

1+ parts

$0.557

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280

$0.557

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Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.623

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650

$0.623

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Chip Stock

USA . 2,520 parts In-Stock

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2,520

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NAC Semi

USA . 2,200 parts In-Stock

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$1.380

10k+ parts

$1.240

2,200

-

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$1.380

$1.240

Vyrian

USA . 1,269 parts In-Stock

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1,269

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Bristol Electronics

USA . 857 parts In-Stock

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857

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Flex Direct, LLC

USA . 780 parts In-Stock

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780

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ComSIT Distribution GmbH

Germany . 120 parts In-Stock

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120

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Atlantic Semiconductor

USA . 77 parts In-Stock

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77

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Semi Source

USA . 45 parts In-Stock

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45

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Flip Electronics

USA . 28 parts In-Stock

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28

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,049 parts In-Stock

1+ parts

$0.498

100+ parts

-

1k+ parts

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1,049

$0.498

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Corphita

USA . 1,952 parts In-Stock

1+ parts

$0.527

100+ parts

-

1k+ parts

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10k+ parts

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1,952

$0.527

-

-

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Corohmni

South Africa . 202 parts In-Stock

1+ parts

$0.586

100+ parts

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202

$0.586

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Continental Prestige Electronics

USA . 4,688 parts In-Stock

1+ parts

$0.623

100+ parts

-

1k+ parts

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10k+ parts

$0.610

4,688

$0.623

-

-

$0.610

Argo Parts USA

USA . 1,697 parts In-Stock

1+ parts

$0.623

100+ parts

-

1k+ parts

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10k+ parts

$0.604

1,697

$0.623

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$0.604

iodParts Technologies Inc.

India . 71,200 parts In-Stock

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71,200

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Lixinc

USA . 14,988 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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Perfect Parts

USA . 9,641 parts In-Stock

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9,641

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Kulean Microsystems

USA . 7,584 parts In-Stock

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7,584

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SupplyDigital Components

Austria . 4,672 parts In-Stock

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4,672

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QUARKTWIN TECHNOLOGY LTD

USA . 4,334 parts In-Stock

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4,334

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Problanco Electronics

Mexico . 2,110 parts In-Stock

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2,110

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UHIMA Technologies

Türkiye . 556 parts In-Stock

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556

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Eastek

USA . 500 parts In-Stock

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500

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TANS Electronics

Latvia . 403 parts In-Stock

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403

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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GreenTree Electronics

Israel . 100 parts In-Stock

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100

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Authorized Procurement Solutions

USA . 100 parts In-Stock

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100

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Overview

Unleash the power of innovation with the MJB45H11G by Onsemi! This high-quality Power Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability, making it the top choice for switching applications. With a maximum power dissipation of 50W and a collector current of 10A, this PNP transistor delivers exceptional efficiency and durability. Whether you're looking to optimize your electronics or enhance your designs, the MJB45H11G is the perfect solution. Trust in Onsemi's expertise and elevate your projects to new heights with this cutting-edge component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: PNP

Suitable for circuits that require PNP transistors, expanding the range of applications where this transistor can be used.

Configuration: SINGLE

Simplifies circuit design by eliminating the need for multiple transistors, saving space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering reliable performance in on/off states.

Surface Mount: YES

Facilitates easy and efficient installation on PCBs using surface mount technology.

Package Shape: RECTANGULAR

A common and versatile package shape that is easy to work with during assembly.

Maximum Power Dissipation (Abs): 50 W

Capable of handling high power levels, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

Compact size helps save space on the PCB, especially in designs with limited board real estate.

Minimum DC Current Gain (hFE): 40

Provides consistent and predictable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments, increasing versatility in application usage.

Maximum Collector-Emitter Voltage: 80 V

Supports high-voltage applications, ensuring reliable performance under varying voltage conditions.

Transistor Element Material: SILICON

High-quality material that offers excellent performance characteristics for the transistor.

Maximum Collector Current (IC): 10 A

Capable of handling high current levels, making it suitable for power applications.

Terminal Finish: MATTE TIN

Provides a reliable connection and soldering surface for the terminals, ensuring a secure electrical connection.

Terminal Position: SINGLE

Simplifies the installation process and reduces the chances of errors during soldering.

Case Connection: COLLECTOR

Easy to connect and integrate into the circuit, offering a straightforward design implementation.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering during PCB assembly under controlled reflow conditions.

Peak Reflow Temperature °C: 260

Withstands high-temperature soldering processes, ensuring reliability during manufacturing.

Nominal Transition Frequency (fT): 40 MHz

Capable of high-speed switching, making it ideal for applications requiring fast response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJB45H11G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJB45H11G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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