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MJB44H11G

Onsemi

MJB44H11G by Onsemi

MJB44H11G by Onsemi is a NPN Power BJT with 80V VCEO, 10A IC, and 50W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150°C. Its Gull Wing terminals make it suitable for surface mount designs.

Median Price

$1.710

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 32 parts In-Stock

1+ parts

$0.452

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32

$0.452

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Rochester

USA . 3,850 parts In-Stock

1+ parts

$0.760

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$0.740

1k+ parts

$0.730

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3,850

$0.760

$0.740

$0.730

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Farnell

UK . 948 parts In-Stock

1+ parts

$1.710

100+ parts

$0.752

1k+ parts

$0.554

10k+ parts

$0.528

948

$1.710

$0.752

$0.554

$0.528

Mouser Electronics

USA . 6,421 parts In-Stock

1+ parts

$2.050

100+ parts

$0.796

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6,421

$2.050

$0.796

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DigiKey

USA . 570 parts In-Stock

1+ parts

$2.050

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$0.886

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$0.646

10k+ parts

$0.544

570

$2.050

$0.886

$0.646

$0.544

Newark

USA . 503 parts In-Stock

1+ parts

$2.100

100+ parts

$0.734

1k+ parts

$0.574

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$0.559

503

$2.100

$0.734

$0.574

$0.559

Element14

Singapore . 948 parts In-Stock

1+ parts

$2.920

100+ parts

$1.290

1k+ parts

$0.900

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$0.882

948

$2.920

$1.290

$0.900

$0.882

Avnet

USA . 1,950 parts In-Stock

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Arrow

USA . 950 parts In-Stock

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$0.513

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$0.510

950

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$0.513

$0.510

Flip Electronics (Authorized)

USA . 50 parts In-Stock

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50

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Verical

USA . 32 parts In-Stock

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$0.817

1k+ parts

$0.589

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$0.541

32

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$0.817

$0.589

$0.541

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Freelance Electronics

USA . 2,705 parts In-Stock

1+ parts

$0.385

100+ parts

$0.404

1k+ parts

$0.381

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2,705

$0.385

$0.404

$0.381

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Vyrian

USA . 2,368 parts In-Stock

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$0.457

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2,368

$0.457

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Digiode

USA . 618 parts In-Stock

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$0.481

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618

$0.481

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Chip Stock

USA . 7,100 parts In-Stock

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NAC Semi

USA . 4,800 parts In-Stock

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$1.240

10k+ parts

$1.130

4,800

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$1.240

$1.130

LIBRA Elektronik GmbH

Germany . 500 parts In-Stock

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500

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LWI Electronics Inc

India . 400 parts In-Stock

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400

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IBS Electronics

USA . 300 parts In-Stock

1+ parts

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100+ parts

$0.849

1k+ parts

$0.827

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300

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$0.849

$0.827

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Flip Electronics

USA . 50 parts In-Stock

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50

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Bristol Electronics

USA . 50 parts In-Stock

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Atlantic Semiconductor

USA . 50 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 40 parts In-Stock

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40

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ComSIT Distribution GmbH

Germany . 19 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,222 parts In-Stock

1+ parts

$0.384

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1,222

$0.384

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Corohmni

South Africa . 422 parts In-Stock

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$0.385

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422

$0.385

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Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.405

100+ parts

$0.369

1k+ parts

$0.332

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350

$0.405

$0.369

$0.332

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Corphita

USA . 1,019 parts In-Stock

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$0.455

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1,019

$0.455

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Component Stockers USA

USA . 212 parts In-Stock

1+ parts

$0.890

100+ parts

$0.820

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212

$0.890

$0.820

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Kepictronics

USA . 15,000 parts In-Stock

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Robosynatics

Brazil . 11,235 parts In-Stock

1+ parts

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$1.441

1k+ parts

$1.411

10k+ parts

$1.411

11,235

-

$1.441

$1.411

$1.411

Lucentia Tech

USA . 11,235 parts In-Stock

1+ parts

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$1.441

1k+ parts

$1.411

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$1.411

11,235

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$1.441

$1.411

$1.411

Lixinc

USA . 8,953 parts In-Stock

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8,953

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Problanco Electronics

Mexico . 7,498 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,495 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,809 parts In-Stock

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Perfect Parts

USA . 4,124 parts In-Stock

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TANS Electronics

Latvia . 3,863 parts In-Stock

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Kulean Microsystems

USA . 3,441 parts In-Stock

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3,441

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SupplyDigital Components

Austria . 2,503 parts In-Stock

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Continental Prestige Electronics

USA . 1,573 parts In-Stock

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1,573

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

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Argo Parts USA

USA . 1,450 parts In-Stock

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Assy Fe

Spain . 1,025 parts In-Stock

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GreenTree Electronics

Israel . 923 parts In-Stock

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UHIMA Technologies

Türkiye . 770 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 40 parts In-Stock

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Glotronic Ltd.

UK . 36 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the MJB44H11G power bipolar junction transistor by Onsemi. Designed with precision and expertise, this NPN transistor offers reliability and efficiency in switching applications. Its small outline package and high collector current make it ideal for a wide range of electronic devices. Trust in Onsemi's reputation for quality and innovation, and experience the value and benefits that the MJB44H11G brings to your projects. Upgrade your products with this high-performance transistor today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and cost-effective while still providing good heat dissipation properties.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile and suitable for a wide range of electronic designs.

Maximum Power Dissipation (Abs): 50 W

With a high maximum power dissipation of 50W, this transistor can handle high power loads and operate reliably even in demanding applications.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage of 80V allows this transistor to be used in circuits that require higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance and reliability, making this product a dependable choice for electronic applications.

Nominal Transition Frequency (fT): 50 MHz

With a high nominal transition frequency of 50MHz, this transistor is capable of fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJB44H11G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJB44H11G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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