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MJB42CT4G

Onsemi

MJB42CT4G by Onsemi

MJB42CT4G by Onsemi is a PNP BJT transistor with 100V VCEO, 6A IC, and 65W power dissipation. Ideal for switching applications, it has a hFE of 15 and operates up to 150°C. With a small outline package style, it features surface mount capability and matte tin terminal finish.

Median Price

$1.430

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 38 parts In-Stock

1+ parts

$0.739

100+ parts

-

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38

$0.739

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Farnell

UK . 1,405 parts In-Stock

1+ parts

$1.430

100+ parts

$0.612

1k+ parts

$0.600

10k+ parts

-

1,405

$1.430

$0.612

$0.600

-

Newark

USA . 656 parts In-Stock

1+ parts

$1.770

100+ parts

$0.755

1k+ parts

$0.593

10k+ parts

$0.513

656

$1.770

$0.755

$0.593

$0.513

DigiKey

USA . 18,397 parts In-Stock

1+ parts

$1.820

100+ parts

$0.776

1k+ parts

-

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18,397

$1.820

$0.776

-

-

Mouser Electronics

USA . 1,124 parts In-Stock

1+ parts

$1.820

100+ parts

$0.777

1k+ parts

$0.498

10k+ parts

-

1,124

$1.820

$0.777

$0.498

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Element14

Singapore . 1,405 parts In-Stock

1+ parts

$2.450

100+ parts

$1.060

1k+ parts

$1.040

10k+ parts

-

1,405

$2.450

$1.060

$1.040

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Arrow

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.508

10k+ parts

$0.499

1,600

-

-

$0.508

$0.499

Verical

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

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$0.505

10k+ parts

$0.496

1,600

-

-

$0.505

$0.496

Rochester

USA . 872 parts In-Stock

1+ parts

-

100+ parts

$0.580

1k+ parts

$0.481

10k+ parts

$0.429

872

-

$0.580

$0.481

$0.429

EBV Elektronik

Germany . 800 parts In-Stock

1+ parts

-

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800

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Flip Electronics (Authorized)

USA . 684 parts In-Stock

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684

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,434 parts In-Stock

1+ parts

$0.450

100+ parts

-

1k+ parts

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2,434

$0.450

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Nova Conductors

Japan . 80 parts In-Stock

1+ parts

$0.562

100+ parts

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80

$0.562

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Chip Stock

USA . 71,000 parts In-Stock

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71,000

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IBS Electronics

USA . 4,800 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.905

10k+ parts

$0.884

4,800

-

-

$0.905

$0.884

Vyrian

USA . 4,105 parts In-Stock

1+ parts

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4,105

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NAC Semi

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.870

10k+ parts

$0.791

4,000

-

-

$0.870

$0.791

Flip Electronics

USA . 684 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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684

-

-

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Bristol Electronics

USA . 500 parts In-Stock

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500

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Prism Electronics

USA . 126 parts In-Stock

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126

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 122 parts In-Stock

1+ parts

$0.426

100+ parts

-

1k+ parts

-

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122

$0.426

-

-

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Corphita

USA . 2,073 parts In-Stock

1+ parts

$0.427

100+ parts

-

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10k+ parts

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2,073

$0.427

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Bastille Electronics

Australia . 2,825 parts In-Stock

1+ parts

$0.562

100+ parts

$0.534

1k+ parts

$0.507

10k+ parts

$0.500

2,825

$0.562

$0.534

$0.507

$0.500

Ampacity Inc.

Singapore . 3,864 parts In-Stock

1+ parts

$0.850

100+ parts

-

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3,864

$0.850

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Andel Nordic

Denmark . 690 parts In-Stock

1+ parts

$8.328

100+ parts

-

1k+ parts

$7.994

10k+ parts

$7.994

690

$8.328

-

$7.994

$7.994

Perfect Parts

USA . 158,366 parts In-Stock

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158,366

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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TANS Electronics

Latvia . 8,029 parts In-Stock

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8,029

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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A-Z Elektronik GmbH

Germany . 7,440 parts In-Stock

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7,440

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Kulean Microsystems

USA . 5,196 parts In-Stock

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5,196

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SupplyDigital Components

Austria . 2,239 parts In-Stock

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2,239

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Problanco Electronics

Mexico . 2,131 parts In-Stock

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2,131

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UHIMA Technologies

Türkiye . 57 parts In-Stock

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57

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FE SAS

France . 13 parts In-Stock

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13

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Overview

Enhance your electronic projects with the high-quality MJB42CT4G Power BJT by Onsemi. Manufactured with precision and expertise, this PNP transistor is ideal for switching applications, delivering reliable performance and efficiency. With its compact design and robust construction, the MJB42CT4G offers customers exceptional value by providing a maximum collector-emitter voltage of 100V and a maximum operating temperature of 150°C. Whether you're a seasoned engineer or a hobbyist, this transistor will elevate your creations to the next level. Upgrade your projects today with the MJB42CT4G and experience the difference that quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package is durable and lightweight, making the transistor easy to handle and install.

Polarity or Channel Type: PNP

PNP transistors are suitable for switching applications and can work well in circuits with positive voltages.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such circuits.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Rectangular package shape is commonly used and makes the transistor compatible with standard PCB layouts.

Terminal Form: GULL WING

Gull wing terminals provide mechanical stability and ease of soldering during assembly.

Maximum Power Dissipation (Abs): 65 W

High power dissipation capability ensures the transistor can handle demanding applications without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style minimizes space requirements and allows for compact design of electronic devices.

Minimum DC Current Gain (hFE): 15

Minimum DC current gain ensures reliable amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to operate efficiently in a wide range of environments.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating ensures the transistor can withstand high voltage spikes in the circuit.

Transistor Element Material: SILICON

Silicon element material provides good performance characteristics and reliability in electronic circuits.

Maximum Collector Current (IC): 6 A

High collector current rating enables the transistor to handle high current loads in the circuit.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and ensures stable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit layout and reduces wiring complexity.

Case Connection: COLLECTOR

Collector case connection allows for efficient heat dissipation and improves thermal management of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

Short maximum time at peak reflow temperature minimizes the risk of damage during soldering process.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable solder joints and prevents issues during assembly.

Nominal Transition Frequency (fT): 3 MHz

High nominal transition frequency indicates good performance at higher frequencies, making it suitable for fast switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJB42CT4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJB42CT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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