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MJB41CT4G

Onsemi

MJB41CT4G by Onsemi

MJB41CT4G by Onsemi is a NPN Power BJT with 100V VCEO, 6A IC, and 65W Ptot. Ideal for switching applications, it has a hFE of 15 and operates up to 150°C. This small outline transistor in gull wing package is surface mountable and features a transition frequency of 3MHz.

Median Price

$0.686

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 650 parts In-Stock

1+ parts

$2.000

100+ parts

$0.858

1k+ parts

$0.681

10k+ parts

$0.592

650

$2.000

$0.858

$0.681

$0.592

Element14

Singapore . 1,198 parts In-Stock

1+ parts

$2.810

100+ parts

$1.210

1k+ parts

$1.190

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1,198

$2.810

$1.210

$1.190

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Future Electronics

Canada . 113,600 parts In-Stock

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$0.690

10k+ parts

$0.670

113,600

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$0.690

$0.670

Farnell

UK . 1,198 parts In-Stock

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$0.707

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$0.693

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1,198

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$0.707

$0.693

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Arrow

USA . 800 parts In-Stock

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$0.584

10k+ parts

$0.561

800

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$0.584

$0.561

Chip1Stop

Japan . 800 parts In-Stock

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$0.629

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800

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$0.629

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Verical

USA . 800 parts In-Stock

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$0.583

10k+ parts

$0.560

800

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$0.583

$0.560

Rochester

USA . 124 parts In-Stock

1+ parts

-

100+ parts

$0.683

1k+ parts

$0.567

10k+ parts

$0.505

124

-

$0.683

$0.567

$0.505

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,489 parts In-Stock

1+ parts

$0.531

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1,489

$0.531

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Maritex

Poland . 350 parts In-Stock

1+ parts

$1.304

100+ parts

$0.827

1k+ parts

$0.663

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350

$1.304

$0.827

$0.663

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IBS Electronics

USA . 124,800 parts In-Stock

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$0.968

10k+ parts

$0.954

124,800

-

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$0.968

$0.954

NAC Semi

USA . 96,000 parts In-Stock

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$1.380

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Chip Stock

USA . 50,000 parts In-Stock

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Vyrian

USA . 15,049 parts In-Stock

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Diverse Electronics

Canada . 2,400 parts In-Stock

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2,400

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Flip Electronics

USA . 800 parts In-Stock

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800

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Cogito LLC

Ukraine . 300 parts In-Stock

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300

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Cyclops Electronics Ltd

UK . 271 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Component Sense

UK . 19 parts In-Stock

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19

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 13,693 parts In-Stock

1+ parts

$0.416

100+ parts

$0.406

1k+ parts

$0.404

10k+ parts

-

13,693

$0.416

$0.406

$0.404

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Ampacity Inc.

Singapore . 13,642 parts In-Stock

1+ parts

$0.416

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13,642

$0.416

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Corphita

USA . 1,220 parts In-Stock

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$0.503

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1,220

$0.503

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Corohmni

South Africa . 252 parts In-Stock

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$0.531

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252

$0.531

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$0.592

100+ parts

$0.539

1k+ parts

$0.485

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60

$0.592

$0.539

$0.485

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Aztec Data Supply Inc.

USA . 3,281 parts In-Stock

1+ parts

$1.067

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3,281

$1.067

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Component Stockers USA

USA . 2,366 parts In-Stock

1+ parts

$1.330

100+ parts

$0.840

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2,366

$1.330

$0.840

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Continental Prestige Electronics

USA . 109 parts In-Stock

1+ parts

$1.450

100+ parts

$0.736

1k+ parts

$0.579

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109

$1.450

$0.736

$0.579

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Perfect Parts

USA . 119,129 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

USA . 27,860 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,797 parts In-Stock

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Lixinc

USA . 17,728 parts In-Stock

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Infinite Electronics LLP (Excess)

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XScomponents

USA . 11,841 parts In-Stock

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$0.770

11,841

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$0.770

iodParts Technologies Inc.

India . 7,500 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,542 parts In-Stock

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Problanco Electronics

Mexico . 6,132 parts In-Stock

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TANS Electronics

Latvia . 3,998 parts In-Stock

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Kulean Microsystems

USA . 3,490 parts In-Stock

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SupplyDigital Components

Austria . 2,846 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 1,632 parts In-Stock

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GreenTree Electronics

Israel . 78 parts In-Stock

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UHIMA Technologies

Türkiye . 54 parts In-Stock

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Overview

Enhance your power management systems with the MJB41CT4G by Onsemi. Designed to deliver superior performance and reliability, this Power Bipolar Junction Transistor (BJT) is perfect for switching applications. With a maximum power dissipation of 65W and a collector current of 6A, this NPN transistor offers exceptional value and efficiency. Its small outline package and surface mount capability make it easy to integrate into various electronic devices. Trust Onsemi's reputation for quality and innovation – upgrade your circuits with the MJB41CT4G today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and durability in various operating conditions.

Polarity or Channel Type: NPN

Suitable for a wide range of switching applications and compatible with many circuit designs.

Configuration: SINGLE

Simplified circuit design and easy to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensures efficient and reliable performance in such scenarios.

Surface Mount: YES

Allows for easy and convenient installation on a PCB, saving space and enabling automated assembly processes.

Maximum Power Dissipation (Abs): 65 W

Capable of handling high power levels, making it suitable for demanding applications.

Terminal Form: GULL WING

Facilitates easy soldering to the PCB, ensuring secure electrical connections.

No. of Terminals: 2

Simplifies the connection process and reduces the risk of wiring errors.

Maximum Collector-Emitter Voltage: 100 V

Can withstand relatively high voltage levels, suitable for various applications.

Maximum Collector Current (IC): 6 A

Capable of handling high current levels, making it suitable for power switching applications.

Nominal Transition Frequency (fT): 3 MHz

Provides high-speed switching performance, ideal for applications requiring rapid ON/OFF transitions.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJB41CT4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJB41CT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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