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MJB41CT4

Onsemi

MJB41CT4 by Onsemi

MJB41CT4 by Onsemi is a NPN BJT transistor with 100V VCE, 6A IC, and 65W power dissipation. Ideal for switching applications, it has a hFE of 15 and operates up to 150 °C. Its GULL WING terminals make it suitable for surface mount designs in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,838 parts In-Stock

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Digiode

USA . 2,042 parts In-Stock

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2,042

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Distributors (Availability)

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AZTECH Wire

Italy . 808 parts In-Stock

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$16.600

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808

$16.600

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TANS Electronics

Latvia . 7,958 parts In-Stock

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Kulean Microsystems

USA . 7,432 parts In-Stock

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Problanco Electronics

Mexico . 5,959 parts In-Stock

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SupplyDigital Components

Austria . 1,991 parts In-Stock

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Corphita

USA . 1,517 parts In-Stock

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UHIMA Technologies

Türkiye . 599 parts In-Stock

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599

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Corohmni

South Africa . 432 parts In-Stock

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Overview

Unleash the power of innovation with the MJB41CT4 by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are perfect for a wide range of applications. From switching to power amplification, this NPN transistor offers unparalleled performance and reliability. With a maximum collector current of 6A and a small outline package style, this transistor is a game-changer in the world of electronics. Trust Onsemi to provide you with the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Being made of plastic/epoxy makes the package durable and lightweight, which is suitable for portable electronic devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for various applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to work with in electronic projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle high-speed switching operations effectively.

Surface Mount: YES

With surface mount capability, this transistor can be easily mounted on circuit boards, saving space and making assembly more efficient.

Maximum Power Dissipation (Abs): 65 W

The high power dissipation of 65W ensures that this transistor can handle high power loads without overheating.

Maximum Collector-Emitter Voltage: 100 V

The high collector-emitter voltage rating of 100V allows this transistor to be used in applications with higher voltage requirements.

Maximum Collector Current (IC): 6 A

With a high collector current rating of 6A, this transistor can handle large current flows, making it suitable for power circuits.

Nominal Transition Frequency (fT): 3 MHz

The high transition frequency of 3MHz indicates that this transistor is capable of amplifying high-frequency signals with low distortion.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJB41CT4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJB41CT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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