Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MJB45H11T4 by Onsemi is a PNP BJT transistor for switching applications. It has a max power dissipation of 50W, max collector-emitter voltage of 80V, and max collector current of 10A. With a small outline package style, it operates up to 150 °C and features a transition frequency of 40MHz.
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UHIMA Technologies
The use of plastic/epoxy material allows for a lightweight and durable package, making it suitable for various applications where weight and durability are important factors.
The PNP polarity allows for easy integration into circuits that require PNP transistors, providing flexibility in design and compatibility with existing systems.
The single configuration simplifies circuit design and reduces complexity, making it easier to integrate into different applications.
Designed specifically for switching applications, this transistor offers fast response times and efficient performance in switching circuits.
Being surface mountable makes it easy to mount and solder onto PCBs, saving space and allowing for automated assembly processes in manufacturing.
With a high maximum power dissipation of 50W, this transistor can handle high power levels without overheating, ensuring reliable operation in demanding conditions.
A minimum DC current gain of 40 ensures consistent and reliable amplification of input signals in various circuits, providing stable and predictable performance.
With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures without performance degradation, making it suitable for harsh environments.
The high maximum collector-emitter voltage rating of 80V allows for use in circuits that require higher voltage handling capabilities, ensuring reliability and safety.
With a high maximum collector current of 10A, this transistor can handle high current loads in circuits, making it suitable for power applications that require high current handling capability.
The high nominal transition frequency of 40 MHz indicates fast switching speeds and high-frequency performance, making it ideal for applications that require high-speed operation.
Power Bipolar Junction Transistors (BJT) MJB45H11T4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi
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MJB45H11T4 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.75
SB
8541.29.00.80
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148
Dc Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SS495ASP
Micro Switch
The Micro Switch SS495ASP is an analog circuit IC with a supply voltage range of 4.5V to 10.5V, suitable for automotive applications. Its package body material is plastic/epoxy, and it has a rectangular shape with three terminals. Operating temperature ranges from -40°C to 125°C, making it ideal for various automotive sensor and control systems.
BSS138BKW,115
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; No. of Terminals: 3; Additional Features: LOGIC LEVEL COMPATIBLE;
MBR0520LT3G
Onsemi
MBR0520LT3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.385V and output current of 0.5A. It operates b/w -65°C to 125°C, ideal for applications requiring high-speed switching and low power loss in compact electronic devices. The package style is small outline, making it suitable for surface mount designs in various electronics.
LM358DT
STMicroelectronics
LM358DT by STMicroelectronics is a dual operational amplifier with a max input offset voltage of 9000 uV. It operates at a nominal voltage of 5V and has a min voltage gain of 25000. This amplifier is commonly used in applications requiring high precision and low power consumption.
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Vishay Intertechnology
Vishay Intertechnology's BAV99 diode features a max forward voltage of 1.3V and a max output current of 0.15A, making it ideal for rectification applications. With a small outline package style and dual terminal position, this series-connected diode is designed for surface mount usage in various electronic circuits with an operating temperature range from -55°C to 150°C.
FDD5614P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Terminal Position: SINGLE; Terminal Form: GULL WING;
1N4148WS
Weitron Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20Z+T&R
Analog Devices
DS18B20Z+T&R by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. The sensor comes in a plastic package suitable for surface mount applications, with a max supply voltage of 5.5V and min of 3V.
BAV99WT1G
BAV99WT1G by Onsemi is a series connected diode with 0.006 us reverse recovery time. It is a small outline rectifier diode with 70V peak reverse voltage, ideal for surface mount applications in electronics requiring fast switching and low forward voltage drop.
LL4148
Silicon Standard
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Taitron Components
LM358N
Harris Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
ULN2803A
Sanken Electric
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;
Laube Technology
STM32H750VBT6
STM32H750VBT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20 timers and 16 DMA channels. It features 2 DAC and 16 ADC channels, suitable for industrial applications requiring high-speed processing up to 48 MHz. With extensive connectivity options like FDCAN, Ethernet, and USB, it provides versatile solutions in a compact package.
New Jersey Semiconductor Products
1N4148W-T
Micro Commercial Components
1N4148W-T by Micro Commercial Components is a single rectifier diode with a max reverse recovery time of 0.004 us. It operates b/w -55 to 150 °C and has a max output current of 0.15 A. Ideal for applications requiring fast switching speeds in small outline packages.
MJE340
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A;
2N3055
New England Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP125
Panasonic
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-609 Code: e0;
BD679A
BD679A by Onsemi is a NPN Power BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for amplifier applications, it features a built-in diode and resistor in a rectangular package with through-hole terminals. Operating up to 150°C, this transistor has a max collector current of 4A and transition frequency of 10MHz.
TIP111
Samsung
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY;
TIP36C
Semitronics
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 25 A;
TIP110
Power Innovations
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500; Maximum Collector-Emitter Voltage: 60 V;
BD13910S
The Onsemi BD13910S is a NPN Power BJT with 80V VCEO, 1.5A IC, and 13W Ptot. Ideal for switching applications, it has a min hFE of 63 and operates up to 150°C. The transistor comes in a PLASTIC/EPOXY package with FLANGE MOUNT style suitable for through-hole mounting.
TIP35C
NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; No. of Elements: 1; Transistor Element Material: SILICON;
MJE3055T
Nte Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 10 A; Package Shape: RECTANGULAR;
BDW93C
NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; JESD-30 Code: R-PSFM-T3;
TIP122
Texas Instruments
TIP122 by Texas Instruments is a NPN Darlington transistor with max VCEsat of 4V, hFE of 1000, and IC of 5A. Ideal for switching applications due to its high current gain and low saturation voltage. With a max power dissipation of 65W, it can handle high-power loads efficiently.
TIP142T
Baneasa S A
NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 15 A; JESD-30 Code: R-PSFM-T3; Terminal Form: THROUGH-HOLE;
D44H11
NPN; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Package Style (Meter): FLANGE MOUNT; Terminal Position: SINGLE; Maximum Collector-Emitter Voltage: 80 V;
TIP127
Inchange Semiconductor
PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON;
BUV48A
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Maximum Turn Off Time (toff): 2400 ns;
TIP50
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Package Body Material: PLASTIC/EPOXY;
MJD45H11T4
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 8 A;
Plessey Semiconductors Discrete Components Div
PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Terminal Position: SINGLE;
Tt Electronics Plc
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Terminal Form: THROUGH-HOLE; Minimum DC Current Gain (hFE): 30;
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MJB44H11T4-A
STMicroelectronics' MJB44H11T4-A is an NPN BJT transistor with a max. collector-emitter voltage of 80V and max. collector current of 10A. Ideal for switching applications, it has a min DC current gain of 40 (hFE) and complies with AEC-Q101 standards.
MJB44H11T4G
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
MJB45H11G
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
MJB41CT4G
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
MJB45H11T4G
MJB45H11T4G by Onsemi is a PNP BJT transistor with 80V VCEO, 10A IC, and 50W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150°C. Its small outline package makes it suitable for surface mount designs.
MJB44H11G
Changzhou Galaxy Century Microelectronics
MJB41C
MJB41CG
MJB41CT4
MJB42C
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
MJB42CG
MJB42CT4
MJB42CT4G
MJB44H11
MJB44H11T4
MJB45H11
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
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