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MJB45H11T4

Onsemi

MJB45H11T4 by Onsemi

MJB45H11T4 by Onsemi is a PNP BJT transistor for switching applications. It has a max power dissipation of 50W, max collector-emitter voltage of 80V, and max collector current of 10A. With a small outline package style, it operates up to 150 °C and features a transition frequency of 40MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 2,326 parts In-Stock

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Vyrian

USA . 1,610 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 224 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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SupplyDigital Components

Austria . 7,204 parts In-Stock

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TANS Electronics

Latvia . 5,084 parts In-Stock

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Problanco Electronics

Mexico . 2,233 parts In-Stock

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Kulean Microsystems

USA . 2,227 parts In-Stock

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Perfect Parts

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Corohmni

South Africa . 345 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 224 parts In-Stock

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Glotronic Ltd.

UK . 179 parts In-Stock

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Corphita

USA . 113 parts In-Stock

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UHIMA Technologies

Türkiye . 66 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the MJB45H11T4 Power Bipolar Junction Transistor by Onsemi. Manufactured with top-notch quality and reliability, this PNP transistor is perfect for switching applications. Its small outline package, high collector current, and low DC current gain provide exceptional value and benefits for your projects. Upgrade your designs with the superior efficiency and durability of the MJB45H11T4, ensuring seamless operation in a wide range of electronic applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material allows for a lightweight and durable package, making it suitable for various applications where weight and durability are important factors.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits that require PNP transistors, providing flexibility in design and compatibility with existing systems.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to integrate into different applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in switching circuits.

Surface Mount: YES

Being surface mountable makes it easy to mount and solder onto PCBs, saving space and allowing for automated assembly processes in manufacturing.

Maximum Power Dissipation (Abs): 50 W

With a high maximum power dissipation of 50W, this transistor can handle high power levels without overheating, ensuring reliable operation in demanding conditions.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures consistent and reliable amplification of input signals in various circuits, providing stable and predictable performance.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures without performance degradation, making it suitable for harsh environments.

Maximum Collector-Emitter Voltage: 80 V

The high maximum collector-emitter voltage rating of 80V allows for use in circuits that require higher voltage handling capabilities, ensuring reliability and safety.

Maximum Collector Current (IC): 10 A

With a high maximum collector current of 10A, this transistor can handle high current loads in circuits, making it suitable for power applications that require high current handling capability.

Nominal Transition Frequency (fT): 40 MHz

The high nominal transition frequency of 40 MHz indicates fast switching speeds and high-frequency performance, making it ideal for applications that require high-speed operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJB45H11T4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJB45H11T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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