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MJB45H11T4G

Onsemi

MJB45H11T4G by Onsemi

MJB45H11T4G by Onsemi is a PNP BJT transistor with 80V VCEO, 10A IC, and 50W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150°C. Its small outline package makes it suitable for surface mount designs.

Median Price

$1.308

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 299 parts In-Stock

1+ parts

$0.573

100+ parts

$0.538

1k+ parts

$0.487

10k+ parts

-

299

$0.573

$0.538

$0.487

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Farnell

UK . 168 parts In-Stock

1+ parts

$1.640

100+ parts

$0.704

1k+ parts

$0.690

10k+ parts

-

168

$1.640

$0.704

$0.690

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Mouser Electronics

USA . 2,013 parts In-Stock

1+ parts

$1.700

100+ parts

$0.848

1k+ parts

$0.561

10k+ parts

-

2,013

$1.700

$0.848

$0.561

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Newark

USA . 1,648 parts In-Stock

1+ parts

$1.960

100+ parts

$0.843

1k+ parts

$0.842

10k+ parts

$0.578

1,648

$1.960

$0.843

$0.842

$0.578

Verical

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

$1.426

1k+ parts

$1.321

10k+ parts

$1.084

1,600

-

$1.426

$1.321

$1.084

DigiKey

USA . 1,169 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.610

10k+ parts

$0.561

1,169

-

-

$0.610

$0.561

RS (Exports)

UK . 860 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.585

10k+ parts

$0.716

860

-

-

$0.585

$0.716

Element14

Singapore . 168 parts In-Stock

1+ parts

-

100+ parts

$1.190

1k+ parts

$1.170

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168

-

$1.190

$1.170

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,223 parts In-Stock

1+ parts

$0.544

100+ parts

-

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-

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1,223

$0.544

-

-

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Nova Conductors

Japan . 48 parts In-Stock

1+ parts

$0.643

100+ parts

-

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48

$0.643

-

-

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Bristol Electronics

USA . 319 parts In-Stock

1+ parts

$1.295

100+ parts

$0.479

1k+ parts

$0.414

10k+ parts

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319

$1.295

$0.479

$0.414

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Chip Stock

USA . 4,155 parts In-Stock

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4,155

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Vyrian

USA . 1,692 parts In-Stock

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1,692

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ACDS - Activité Composants Distribution Service

France . 1,600 parts In-Stock

1+ parts

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1,600

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IBS Electronics

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.679

10k+ parts

$0.644

1,600

-

-

$0.679

$0.644

Flip Electronics

USA . 800 parts In-Stock

1+ parts

-

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800

-

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NAC Semi

USA . 800 parts In-Stock

1+ parts

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100+ parts

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$1.580

10k+ parts

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800

-

-

$1.580

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Zilex Electronics Inc.

Canada . 799 parts In-Stock

1+ parts

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100+ parts

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799

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Dan-Mar Components

USA . 319 parts In-Stock

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319

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J2 Sourcing AB

Sweden . 20 parts In-Stock

1+ parts

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20

-

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A2Z Electronics, Inc.

USA . 20 parts In-Stock

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20

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NexGen Digital

USA . 1 parts In-Stock

1+ parts

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,090 parts In-Stock

1+ parts

$0.487

100+ parts

-

1k+ parts

-

10k+ parts

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1,090

$0.487

-

-

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Corphita

USA . 780 parts In-Stock

1+ parts

$0.515

100+ parts

-

1k+ parts

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780

$0.515

-

-

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Corohmni

South Africa . 222 parts In-Stock

1+ parts

$0.573

100+ parts

-

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222

$0.573

-

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Argo Parts USA

USA . 4,555 parts In-Stock

1+ parts

$0.643

100+ parts

-

1k+ parts

-

10k+ parts

$0.623

4,555

$0.643

-

-

$0.623

Continental Prestige Electronics

USA . 514 parts In-Stock

1+ parts

$0.643

100+ parts

-

1k+ parts

-

10k+ parts

$0.630

514

$0.643

-

-

$0.630

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.643

100+ parts

-

1k+ parts

$0.610

10k+ parts

$0.598

500

$0.643

-

$0.610

$0.598

Component Stockers USA

USA . 724 parts In-Stock

1+ parts

$1.290

100+ parts

$0.820

1k+ parts

-

10k+ parts

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724

$1.290

$0.820

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-

Microchip USA

USA . 5,689 parts In-Stock

1+ parts

$5.141

100+ parts

$5.109

1k+ parts

$5.109

10k+ parts

$5.109

5,689

$5.141

$5.109

$5.109

$5.109

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

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56,986

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Perfect Parts

USA . 50,575 parts In-Stock

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50,575

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GreenTree Electronics

Israel . 32,000 parts In-Stock

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32,000

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Kepictronics

USA . 27,860 parts In-Stock

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27,860

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QUARKTWIN TECHNOLOGY LTD

USA . 13,221 parts In-Stock

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13,221

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TANS Electronics

Latvia . 7,208 parts In-Stock

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7,208

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A-Z Elektronik GmbH

Germany . 7,082 parts In-Stock

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7,082

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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SupplyDigital Components

Austria . 4,718 parts In-Stock

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4,718

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Problanco Electronics

Mexico . 4,425 parts In-Stock

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4,425

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Kulean Microsystems

USA . 4,246 parts In-Stock

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4,246

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Lixinc

USA . 3,176 parts In-Stock

1+ parts

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3,176

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Cyclops Electronics Ltd (Excess)

UK . 1,600 parts In-Stock

1+ parts

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1,600

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Glotronic Ltd.

UK . 1,280 parts In-Stock

1+ parts

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1,280

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UHIMA Technologies

Türkiye . 945 parts In-Stock

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945

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Overview

Experience the power of innovation with the MJB45H11T4G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that are perfect for switching applications. With a maximum power dissipation of 50W and a maximum collector current of 10A, this PNP transistor offers reliable performance and durability. Whether you're designing electronic circuits or working on power control systems, the MJB45H11T4G provides the efficiency and precision you need to bring your projects to life. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - The use of plastic/epoxy material makes the product lightweight and durable.

Polarity or Channel Type:

PNP - The PNP configuration allows for easy integration with other PNP components for efficient circuit design.

Configuration:

SINGLE - The single configuration simplifies installation and reduces the chances of wiring errors.

Transistor Application:

SWITCHING - Designed specifically for switching applications, ensuring fast and reliable performance.

Surface Mount:

YES - The surface mount capability makes it easy to assemble onto circuit boards, saving time and effort.

Package Shape:

RECTANGULAR - The rectangular shape allows for easy placement and organization on circuit boards.

Terminal Form:

GULL WING - The gull wing terminal form provides a secure connection and minimizes the risk of disconnection.

No. of Terminals:

2 - With only 2 terminals, installation is straightforward and less prone to errors.

Maximum Power Dissipation (Abs):

50 W - The high power dissipation capability ensures the product can handle demanding tasks.

Package Style (Meter):

SMALL OUTLINE - The small outline package style saves space and allows for compact circuit designs.

Minimum DC Current Gain (hFE):

40 - The minimum DC current gain ensures consistent performance in various operating conditions.

Maximum Operating Temperature:

150 °C - The high maximum operating temperature allows for reliable performance in demanding environments.

Maximum Collector-Emitter Voltage:

80 V - The high collector-emitter voltage rating ensures compatibility with a wide range of applications.

Transistor Element Material:

SILICON - The use of silicon as the transistor element material provides high efficiency and reliability.

Maximum Collector Current (IC):

10 A - The high maximum collector current rating allows for handling of heavy loads.

Terminal Finish:

MATTE TIN - The matte tin finish provides corrosion resistance and ensures a long lifespan.

Terminal Position:

SINGLE - The single terminal position simplifies installation and prevents connection errors.

Case Connection:

COLLECTOR - The case connection at the collector allows for easy integration into various circuit designs.

Maximum Time At Peak Reflow Temperature (s):

30 - The short duration at peak reflow temperature ensures minimal heat exposure, protecting the component.

Peak Reflow Temperature °C:

260 - The peak reflow temperature tolerance ensures durability during soldering processes.

Nominal Transition Frequency (fT):

40 MHz - The high nominal transition frequency allows for fast switching speeds in applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJB45H11T4G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJB45H11T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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