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MJB42C

Onsemi

MJB42C by Onsemi

MJB42C by Onsemi is a PNP BJT transistor with 100V VCE, 6A IC, and 65W power dissipation. Ideal for switching applications, it has a hFE of 15 and operates up to 150 °C. With Gull Wing terminals in a small outline package, it offers high performance in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 919 parts In-Stock

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Digiode

USA . 69 parts In-Stock

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,076 parts In-Stock

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Kulean Microsystems

USA . 1,926 parts In-Stock

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Problanco Electronics

Mexico . 1,669 parts In-Stock

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Corphita

USA . 1,473 parts In-Stock

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SupplyDigital Components

Austria . 1,100 parts In-Stock

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TANS Electronics

Latvia . 908 parts In-Stock

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UHIMA Technologies

Türkiye . 514 parts In-Stock

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Corohmni

South Africa . 471 parts In-Stock

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Overview

Upgrade your power systems with the MJB42C by Onsemi, a top-quality Power Bipolar Junction Transistor perfect for switching applications. Manufactured by Onsemi, a leader in semiconductor technology, this PNP transistor offers reliability, efficiency, and performance. With a maximum power dissipation of 65W and a collector current of 6A, this transistor is ideal for a wide range of electronic projects. Say goodbye to overheating issues and hello to seamless power management with the MJB42C.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor suitable for various power control tasks.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient power control and modulation.

Surface Mount: YES

Surface mount capability allows for easy and compact integration on PCBs, saving space and increasing flexibility in design.

Maximum Power Dissipation (Abs): 65 W

High power dissipation capability makes this transistor suitable for handling moderate power levels without overheating.

Maximum Collector-Emitter Voltage: 100 V

With a high maximum voltage rating, this transistor can be used in a variety of industrial and high-power applications.

Maximum Collector Current (IC): 6 A

High collector current rating allows for handling of large currents, making it ideal for power switching applications.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency enables fast switching speeds, improving the overall performance of the transistor in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJB42C attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJB42C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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