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MJB44H11T4

Onsemi

MJB44H11T4 by Onsemi

MJB44H11T4 by Onsemi is a NPN BJT transistor with 80V VCEO, 10A IC, and 50W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150 °C. Its Gull Wing terminals make it suitable for surface mount designs in various electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 6,840 parts In-Stock

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Vyrian

USA . 3,525 parts In-Stock

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Digiode

USA . 2,145 parts In-Stock

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Anansix

USA . 605 parts In-Stock

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IDEA Electronic Components Group

UK . 2,173 parts In-Stock

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$0.937

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$0.844

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2,173

$0.937

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$0.844

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MKK Technologies

India . 760 parts In-Stock

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$1.763

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760

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DigiPath Technology Company

USA . 760 parts In-Stock

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$1.763

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Kepictronics

USA . 13,000 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 8,258 parts In-Stock

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TANS Electronics

Latvia . 6,427 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,976 parts In-Stock

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Problanco Electronics

Mexico . 4,452 parts In-Stock

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Corphita

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,984 parts In-Stock

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SupplyDigital Components

Austria . 3,207 parts In-Stock

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RC Electronics

USA . 1,978 parts In-Stock

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Parana Technologies

USA . 1,012 parts In-Stock

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$1.121

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UHIMA Technologies

Türkiye . 936 parts In-Stock

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Corohmni

South Africa . 211 parts In-Stock

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Overview

Unleash the power of innovation with the MJB44H11T4 by Onsemi, a top-quality Power BJT that sets the standard for performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor is ideal for switching applications, offering customers unparalleled value, benefits, and advantages. From its robust construction to its impressive 50W power dissipation capacity, this transistor is designed to excel in demanding environments. Trust Onsemi to deliver cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switches and amplifiers, making this transistor versatile and suitable for a variety of applications.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to integrate into electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient performance.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Power Dissipation (Abs): 50 W

High power dissipation capability makes this transistor suitable for applications that require handling large amounts of power.

Maximum Collector-Emitter Voltage: 80 V

With a high maximum collector-emitter voltage, this transistor can handle high voltage applications safely and reliably.

Maximum Collector Current (IC): 10 A

High collector current rating allows this transistor to handle high current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows for efficient switching and amplification at high frequencies, making this transistor suitable for RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJB44H11T4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJB44H11T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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