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BDX54CG

Onsemi

BDX54CG by Onsemi

Onsemi's BDX54CG is a PNP power BJT with 100V VCEO and 8A IC, ideal for amplifier applications. Featuring a built-in diode and resistor, it has a min hFE of 750 and can handle up to 60W power dissipation. With a max operating temperature of 150°C, this transistor is designed in a rectangular package with through-hole terminals.

Median Price

$0.603

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 22 parts In-Stock

1+ parts

$0.692

100+ parts

$0.658

1k+ parts

$0.658

10k+ parts

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22

$0.692

$0.658

$0.658

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Rochester

USA . 21,038 parts In-Stock

1+ parts

-

100+ parts

$0.582

1k+ parts

$0.483

10k+ parts

$0.430

21,038

-

$0.582

$0.483

$0.430

Verical

USA . 21,038 parts In-Stock

1+ parts

-

100+ parts

-

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$0.603

10k+ parts

$0.538

21,038

-

-

$0.603

$0.538

Distributors (In-Stock)

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Flip Electronics

USA . 350 parts In-Stock

1+ parts

$0.290

100+ parts

-

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350

$0.290

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Digiode

USA . 1,972 parts In-Stock

1+ parts

$0.453

100+ parts

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1,972

$0.453

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Nova Conductors

Japan . 500 parts In-Stock

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$0.623

100+ parts

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500

$0.623

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Chip Stock

USA . 23,400 parts In-Stock

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23,400

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Dan-Mar Components

USA . 13,500 parts In-Stock

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13,500

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Bristol Electronics

USA . 10,400 parts In-Stock

1+ parts

-

100+ parts

$0.563

1k+ parts

$0.390

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10,400

-

$0.563

$0.390

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Vyrian

USA . 7,369 parts In-Stock

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7,369

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Martec Srl

Italy . 1,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 54 parts In-Stock

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54

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ComSIT USA

USA . 54 parts In-Stock

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54

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LIBRA Elektronik GmbH

Germany . 50 parts In-Stock

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50

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VNN

France . 45 parts In-Stock

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45

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LittleDiode

UK . 3 parts In-Stock

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3

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Distributors (Availability)

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Semicontronic

India . 10,374 parts In-Stock

1+ parts

$0.405

100+ parts

$0.395

1k+ parts

$0.393

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10,374

$0.405

$0.395

$0.393

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Corphita

USA . 1,354 parts In-Stock

1+ parts

$0.429

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1,354

$0.429

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Corohmni

South Africa . 268 parts In-Stock

1+ parts

$0.477

100+ parts

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268

$0.477

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Aztec Data Supply Inc.

USA . 2,632 parts In-Stock

1+ parts

$0.545

100+ parts

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2,632

$0.545

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Continental Prestige Electronics

USA . 6,283 parts In-Stock

1+ parts

$0.623

100+ parts

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$0.611

6,283

$0.623

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$0.611

Argo Parts USA

USA . 3,499 parts In-Stock

1+ parts

$0.623

100+ parts

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$0.604

3,499

$0.623

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$0.604

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.623

100+ parts

-

1k+ parts

$0.592

10k+ parts

$0.579

2,000

$0.623

-

$0.592

$0.579

Advanced Electronics

New Zealand . 22 parts In-Stock

1+ parts

$0.692

100+ parts

$0.658

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$0.658

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22

$0.692

$0.658

$0.658

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Ampacity Inc.

Singapore . 490 parts In-Stock

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$0.880

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490

$0.880

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AZTECH Wire

Italy . 906 parts In-Stock

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$16.980

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906

$16.980

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Perfect Parts

USA . 113,324 parts In-Stock

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SupplyDigital Components

Austria . 7,278 parts In-Stock

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TANS Electronics

Latvia . 7,108 parts In-Stock

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Problanco Electronics

Mexico . 6,924 parts In-Stock

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Kulean Microsystems

USA . 5,014 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,839 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,226 parts In-Stock

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Kepictronics

USA . 1,450 parts In-Stock

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iodParts Technologies Inc.

India . 850 parts In-Stock

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850

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Cyclops Electronics Ltd (Excess)

UK . 825 parts In-Stock

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825

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UHIMA Technologies

Türkiye . 816 parts In-Stock

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Glotronic Ltd.

UK . 660 parts In-Stock

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660

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Overview

Elevate your electronic projects with the BDX54CG by Onsemi, a premium Power BJT transistor that guarantees top-notch quality and reliability. Manufactured by Onsemi, a renowned industry leader, this PNP Darlington transistor with built-in diode and resistor is perfect for amplifier applications. With a maximum power dissipation of 60W and a high DC current gain of 750, this transistor offers exceptional performance and efficiency. Trust Onsemi's expertise and choose the BDX54CG for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and longevity.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Convenient configuration with additional components for specific applications, simplifying circuit design.

Transistor Application: AMPLIFIER

Optimized for amplifier applications, providing excellent performance in signal amplification.

Maximum Power Dissipation (Abs): 60 W

High power dissipation capacity allows for handling of larger loads and prevents overheating.

Package Style (Meter): FLANGE MOUNT

Flange mounting design facilitates easy installation and secure mounting.

Minimum DC Current Gain (hFE): 750

High DC current gain ensures efficient signal amplification and performance.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for various environments.

Maximum Collector-Emitter Voltage: 100 V

Can handle high collector-emitter voltages, expanding the range of applications.

Transistor Element Material: SILICON

Silicon is known for its reliability and efficiency in electronic components.

Maximum Collector Current (IC): 8 A

High collector current capacity allows for handling larger currents, making it suitable for high-power applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability for easy integration into circuits.

Nominal Transition Frequency (fT): 20 MHz

High transition frequency enables faster switching speeds, ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDX54CG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDX54CG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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