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BDX54BG

Onsemi

BDX54BG by Onsemi

BDX54BG by Onsemi is a PNP power BJT with 60W max power dissipation, 80V max collector-emitter voltage, and 8A max collector current. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. Operating at up to 150°C, it has a min hFE of 750 and fT of 4MHz.

Median Price

$0.452

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 13 parts In-Stock

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-

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$0.452

1k+ parts

$0.375

10k+ parts

$0.334

13

-

$0.452

$0.375

$0.334

Distributors (In-Stock)

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Digiode

USA . 113 parts In-Stock

1+ parts

$0.420

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113

$0.420

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Vyrian

USA . 10,163 parts In-Stock

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Chip Stock

USA . 3,085 parts In-Stock

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Cyclops Electronics Ltd

UK . 295 parts In-Stock

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ComSIT Distribution GmbH

Germany . 250 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 200 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 866 parts In-Stock

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$0.398

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866

$0.398

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Corohmni

South Africa . 497 parts In-Stock

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$0.442

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497

$0.442

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Native Components

USA . 961 parts In-Stock

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$7.260

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961

$7.260

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AZTECH Wire

Italy . 494 parts In-Stock

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$16.510

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QUARKTWIN TECHNOLOGY LTD

USA . 18,633 parts In-Stock

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Kulean Microsystems

USA . 6,169 parts In-Stock

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SupplyDigital Components

Austria . 5,749 parts In-Stock

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Problanco Electronics

Mexico . 5,493 parts In-Stock

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Perfect Parts

USA . 4,627 parts In-Stock

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TANS Electronics

Latvia . 3,336 parts In-Stock

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Northwest PG Solutions

USA . 1,698 parts In-Stock

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Kepictronics

USA . 445 parts In-Stock

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Metaverse IC Inc.

Canada . 233 parts In-Stock

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UHIMA Technologies

Türkiye . 122 parts In-Stock

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Overview

Enhance your amplifier projects with the high-quality BDX54BG power transistor from Onsemi. With its Darlington configuration, built-in diode, and resistor, this PNP transistor offers superior performance and reliability. Ideal for a wide range of applications, this transistor can handle a maximum collector-emitter voltage of 80V and a maximum operating temperature of 150°C. Trust in Onsemi's reputation for excellence and innovation, and experience the value and benefits that the BDX54BG transistor brings to your electronic designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, ensuring reliability in various environments.

Polarity or Channel Type: PNP

PNP transistor allows for high-speed switching and amplification of signals, making it suitable for a wide range of applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration offers high current gain and reduced saturation voltage, while the built-in diode and resistor simplify circuit design and save space.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, providing high power dissipation and reliable performance.

Maximum Power Dissipation (Abs): 60 W

With a high power dissipation capability of 60 W, this transistor can handle high power loads without overheating.

Maximum Collector-Emitter Voltage: 80 V

A high collector-emitter voltage rating of 80 V allows for operation in circuits with higher voltage requirements.

Maximum Collector Current (IC): 8 A

Capable of handling a maximum collector current of 8 A, making it suitable for applications that require high current output.

Nominal Transition Frequency (fT): 4 MHz

High transition frequency of 4 MHz allows for fast response time and high-frequency operation in amplifier circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDX54BG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDX54BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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