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MJ11022G

Onsemi

MJ11022G by Onsemi

MJ11022G by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. With max. collector-emitter voltage of 250V and max. collector current of 15A, it can handle up to 175W power dissipation. Featuring built-in diode and resistor, this transistor operates at temperatures up to 175°C in a round flange mount package.

Median Price

$8.438

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 68 parts In-Stock

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$9.920

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68

$9.920

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DigiKey

USA . 35 parts In-Stock

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$10.040

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35

$10.040

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Master Electronics

USA . 200 parts In-Stock

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$5.290

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$4.680

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200

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$5.290

$4.680

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Verical

USA . 165 parts In-Stock

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$6.956

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$6.412

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165

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$6.956

$6.412

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Flip Electronics (Authorized)

USA . 6 parts In-Stock

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Digiode

USA . 1,178 parts In-Stock

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$8.588

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1,178

$8.588

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Ace Electronics

USA . 2 parts In-Stock

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$10.950

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2

$10.950

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Vyrian

USA . 2,911 parts In-Stock

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IBS Electronics

USA . 200 parts In-Stock

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$7.419

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$6.564

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200

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$7.419

$6.564

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Bristol Electronics

USA . 29 parts In-Stock

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Flip Electronics

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Benley Electronics

USA . 2 parts In-Stock

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$1.000

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2

$1.000

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.205

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$1.193

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$1.145

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500

$1.205

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$1.145

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Ampacity Inc.

Singapore . 128 parts In-Stock

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$4.500

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$4.500

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Corohmni

South Africa . 276 parts In-Stock

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$6.409

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Corphita

USA . 1,204 parts In-Stock

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$8.136

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QUARKTWIN TECHNOLOGY LTD

USA . 5,142 parts In-Stock

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Kulean Microsystems

USA . 4,737 parts In-Stock

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SupplyDigital Components

Austria . 4,186 parts In-Stock

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TANS Electronics

Latvia . 3,285 parts In-Stock

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Problanco Electronics

Mexico . 1,090 parts In-Stock

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Perfect Parts

USA . 125 parts In-Stock

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UHIMA Technologies

Türkiye . 79 parts In-Stock

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Overview

Upgrade your power systems with the MJ11022G by Onsemi. With a reputation for quality and reliability, Onsemi delivers power bipolar junction transistors that excel in switching applications. The MJ11022G stands out with its high power dissipation, robust collector current, and built-in diode and resistor for added convenience. Its NPN polarity and Darlington configuration make it a versatile choice for various projects. Trust Onsemi to provide value-packed solutions that elevate your designs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides excellent heat dissipation, allowing the transistor to operate at higher power levels without overheating.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer higher current and power handling capabilities compared to PNP transistors.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration provides high current gain, while the built-in diode and resistor simplify circuit design and protect the transistor from reverse voltage spikes.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can handle rapid switching speeds and high current levels reliably.

Maximum Power Dissipation: 175 W

With a high power dissipation rating, this transistor can handle heavy loads and operate at high power levels without damage.

Maximum Collector-Emitter Voltage: 250 V

The high voltage rating allows this transistor to be used in a wide range of applications where high voltage levels are present.

Maximum Collector Current: 15 A

Capable of handling high current levels, this transistor is suitable for applications that require high power switching.

Nominal Transition Frequency: 3 MHz

With a high transition frequency, this transistor can switch states rapidly, making it ideal for high frequency switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJ11022G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJ11022G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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