Loading...

MJD350G

Onsemi

MJD350G by Onsemi

MJD350G by Onsemi is a PNP BJT transistor with 300V VCE, 0.5A IC, and 15W power dissipation. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. Operating up to 150°C, it offers a min hFE of 30 and tin finish on single terminal.

Median Price

$0.504

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.504

100+ parts

-

1k+ parts

-

10k+ parts

-

150

$0.504

-

-

-

Chip Stock

USA . 62,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

62,000

-

-

-

-

Vyrian

USA . 8,040 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,040

-

-

-

-

Digiode

USA . 2,445 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,445

-

-

-

-

Goldney Electronics S.L.

Spain . 179 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

179

-

-

-

-

Atlantic Semiconductor

USA . 128 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

128

-

-

-

-

Bristol Electronics

USA . 112 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

112

-

-

-

-

Inventory MP

USA . 9 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 413 parts In-Stock

1+ parts

$0.494

100+ parts

-

1k+ parts

-

10k+ parts

-

413

$0.494

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.504

100+ parts

$0.494

1k+ parts

$0.479

10k+ parts

$0.469

500

$0.504

$0.494

$0.479

$0.469

AZTECH Wire

Italy . 478 parts In-Stock

1+ parts

$17.271

100+ parts

-

1k+ parts

-

10k+ parts

-

478

$17.271

-

-

-

Ampacity Inc.

Singapore . 632 parts In-Stock

1+ parts

$21.050

100+ parts

-

1k+ parts

-

10k+ parts

-

632

$21.050

-

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56,986

-

-

-

-

Kepictronics

USA . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,000

-

-

-

-

Lixinc

USA . 12,619 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,619

-

-

-

-

SupplyDigital Components

Austria . 7,591 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,591

-

-

-

-

Problanco Electronics

Mexico . 5,439 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,439

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Kulean Microsystems

USA . 2,904 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,904

-

-

-

-

TANS Electronics

Latvia . 1,767 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,767

-

-

-

-

Assy Fe

Spain . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Corphita

USA . 717 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

717

-

-

-

-

UHIMA Technologies

Türkiye . 347 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

347

-

-

-

-

Overview

Unleash the power of innovation with the MJD350G by Onsemi, a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, known for their cutting-edge technology and reliability, this PNP transistor offers customers unbeatable value and performance. With a maximum collector-emitter voltage of 300V and a maximum power dissipation of 15W, this transistor provides optimal efficiency and functionality. Whether you're working on industrial automation, consumer electronics, or automotive systems, the MJD350G is the perfect solution for your power management needs. Upgrade to Onsemi today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and can complement other components effectively.

Configuration: SINGLE

Simplified circuit design and ease of implementation.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation in such scenarios.

Surface Mount: YES

Allows for easy integration onto PCBs, saving space and facilitating automated assembly processes.

Maximum Power Dissipation (Abs): 15 W

Capability to handle higher power levels without overheating, suitable for demanding applications.

Minimum DC Current Gain (hFE): 30

Ensures reliable amplification of current in the circuit, maintaining stable performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments, ensuring consistent operation in various conditions.

Maximum Collector-Emitter Voltage: 300 V

Allows for higher voltage handling capacity, expanding the range of applications where the transistor can be used.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, suitable for various switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJD350G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MJD350G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20