Loading...

MJE344G

Onsemi

MJE344G by Onsemi

The Onsemi MJE344G is a NPN BJT transistor with 200V VCEO, 0.5A IC, and 20W Ptot. Ideal for amplifier applications, it has hFE of 30, fT of 15MHz, and operates up to 150°C. The package is rectangular with flange mount style and matte tin finish in a through-hole configuration.

Median Price

$0.261

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 90 parts In-Stock

1+ parts

$0.222

100+ parts

$0.172

1k+ parts

-

10k+ parts

-

90

$0.222

$0.172

-

-

Verical

USA . 90 parts In-Stock

1+ parts

-

100+ parts

$0.300

1k+ parts

$0.252

10k+ parts

-

90

-

$0.300

$0.252

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.273

100+ parts

-

1k+ parts

-

10k+ parts

-

650

$0.273

-

-

-

Digiode

USA . 1,468 parts In-Stock

1+ parts

$0.274

100+ parts

-

1k+ parts

-

10k+ parts

-

1,468

$0.274

-

-

-

Vyrian

USA . 5,059 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,059

-

-

-

-

Chip Stock

USA . 595 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

595

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 90 parts In-Stock

1+ parts

$0.189

100+ parts

-

1k+ parts

-

10k+ parts

-

90

$0.189

-

-

-

Corphita

USA . 92 parts In-Stock

1+ parts

$0.259

100+ parts

-

1k+ parts

-

10k+ parts

-

92

$0.259

-

-

-

Corohmni

South Africa . 233 parts In-Stock

1+ parts

$0.268

100+ parts

-

1k+ parts

-

10k+ parts

-

233

$0.268

-

-

-

Continental Prestige Electronics

USA . 6,243 parts In-Stock

1+ parts

$0.273

100+ parts

-

1k+ parts

-

10k+ parts

$0.268

6,243

$0.273

-

-

$0.268

Argo Parts USA

USA . 2,517 parts In-Stock

1+ parts

$0.273

100+ parts

-

1k+ parts

-

10k+ parts

$0.265

2,517

$0.273

-

-

$0.265

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.273

100+ parts

$0.268

1k+ parts

-

10k+ parts

-

50

$0.273

$0.268

-

-

AZTECH Wire

Italy . 545 parts In-Stock

1+ parts

$8.743

100+ parts

-

1k+ parts

-

10k+ parts

-

545

$8.743

-

-

-

Lixinc

USA . 19,145 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19,145

-

-

-

-

Perfect Parts

USA . 8,322 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,322

-

-

-

-

Problanco Electronics

Mexico . 6,897 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,897

-

-

-

-

Kulean Microsystems

USA . 6,683 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,683

-

-

-

-

SupplyDigital Components

Austria . 6,515 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,515

-

-

-

-

ChipstoGo Electronic ltd

UK . 5,360 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,360

-

-

-

-

Kepictronics

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,500

-

-

-

-

TANS Electronics

Latvia . 953 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

953

-

-

-

-

Metaverse IC Inc.

Canada . 665 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

665

-

-

-

-

UHIMA Technologies

Türkiye . 628 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

628

-

-

-

-

GreenTree Electronics

Israel . 175 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

175

-

-

-

-

Overview

Enhance your amplifier designs with the high-quality MJE344G Power Bipolar Junction Transistor by Onsemi. Known for their reliability and innovation, Onsemi delivers top-notch components like this NPN transistor that offers a maximum power dissipation of 20W and a maximum collector-emitter voltage of 200V. With a minimum DC current gain of 30, this transistor is perfect for various amplifier applications. Upgrade your projects with the MJE344G and experience the superior performance and value that Onsemi products provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and other electronic circuits, offering good performance and versatility.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance and efficiency in that application.

Maximum Power Dissipation (Abs): 20 W

Can handle relatively high power dissipation, making it suitable for applications where power handling is crucial.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, offering reliability in demanding operating conditions.

Maximum Collector-Emitter Voltage: 200 V

With a high maximum voltage rating, this transistor can be used in applications where high voltage levels are present.

Nominal Transition Frequency (fT): 15 MHz

Offers a high transition frequency, enabling high-frequency operation in amplifier circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE344G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-225AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE344G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20