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BDX34BG

Onsemi

BDX34BG by Onsemi

BDX34BG by Onsemi is a PNP power BJT with 70W max power dissipation, 10A max collector current, and 150°C max operating temperature. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor has a min hFE of 750 and operates at a max VCE of 80V in a rectangular package style suitable for flange mount installations.

Median Price

$0.626

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 37 parts In-Stock

1+ parts

$0.693

100+ parts

$0.371

1k+ parts

$0.297

10k+ parts

$0.251

37

$0.693

$0.371

$0.297

$0.251

Element14

Singapore . 37 parts In-Stock

1+ parts

$1.370

100+ parts

$0.733

1k+ parts

$0.588

10k+ parts

$0.476

37

$1.370

$0.733

$0.588

$0.476

Rochester

USA . 1,056 parts In-Stock

1+ parts

-

100+ parts

$0.540

1k+ parts

$0.448

10k+ parts

$0.400

1,056

-

$0.540

$0.448

$0.400

Verical

USA . 843 parts In-Stock

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$0.560

10k+ parts

$0.499

843

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$0.560

$0.499

Flip Electronics (Authorized)

USA . 69 parts In-Stock

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69

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Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.315

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-

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500

$0.315

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Digiode

USA . 2,305 parts In-Stock

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$0.421

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2,305

$0.421

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TME

Poland . 249 parts In-Stock

1+ parts

$0.760

100+ parts

$0.420

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-

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249

$0.760

$0.420

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Chip Stock

USA . 7,969 parts In-Stock

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7,969

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Vyrian

USA . 7,492 parts In-Stock

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7,492

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VNN

France . 4,586 parts In-Stock

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4,586

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Ashlea Components Ltd

UK . 2,310 parts In-Stock

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Flip Electronics

USA . 69 parts In-Stock

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69

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LIBRA Elektronik GmbH

Germany . 54 parts In-Stock

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54

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Distributors (Availability)

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Corohmni

South Africa . 260 parts In-Stock

1+ parts

$0.309

100+ parts

-

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260

$0.309

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.315

100+ parts

$0.309

1k+ parts

-

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2,000

$0.315

$0.309

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Argo Parts USA

USA . 1,789 parts In-Stock

1+ parts

$0.315

100+ parts

-

1k+ parts

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10k+ parts

$0.306

1,789

$0.315

-

-

$0.306

Continental Prestige Electronics

USA . 617 parts In-Stock

1+ parts

$0.315

100+ parts

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$0.309

617

$0.315

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-

$0.309

Ampacity Inc.

Singapore . 1,106 parts In-Stock

1+ parts

$0.377

100+ parts

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1,106

$0.377

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Semicontronic

India . 1,099 parts In-Stock

1+ parts

$0.377

100+ parts

$0.368

1k+ parts

$0.366

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1,099

$0.377

$0.368

$0.366

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Corphita

USA . 1,809 parts In-Stock

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$0.399

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1,809

$0.399

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Aztec Data Supply Inc.

USA . 2,162 parts In-Stock

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$0.888

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$0.888

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AZTECH Wire

Italy . 338 parts In-Stock

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$20.500

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338

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Kepictronics

USA . 11,037 parts In-Stock

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Lixinc

USA . 7,770 parts In-Stock

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Kulean Microsystems

USA . 7,220 parts In-Stock

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TANS Electronics

Latvia . 6,591 parts In-Stock

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SupplyDigital Components

Austria . 5,457 parts In-Stock

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Problanco Electronics

Mexico . 5,038 parts In-Stock

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Perfect Parts

USA . 4,071 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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UHIMA Technologies

Türkiye . 848 parts In-Stock

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848

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Authorized Procurement Solutions

USA . 197 parts In-Stock

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GreenTree Electronics

Israel . 197 parts In-Stock

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197

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Overview

Elevate your power switching capabilities with the BDX34BG by Onsemi. Crafted by a leading manufacturer in the industry, this Power Bipolar Junction Transistor offers superior performance and reliability. Ideal for a range of applications, this PNP transistor comes in a convenient package style with built-in diode and resistor. With a high DC current gain and maximum collector current, this transistor ensures optimal efficiency and power dissipation. Upgrade your projects with the BDX34BG and experience seamless switching operations like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and insulation for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor suitable for various switching tasks.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and the built-in diode and resistor provide added convenience for circuit design and protection.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast and efficient switching operation.

Terminal Form: THROUGH-HOLE

Through-hole terminals make it easy to solder and mount the transistor securely onto a circuit board.

Maximum Power Dissipation (Abs): 70 W

With a high maximum power dissipation, this transistor can handle large amounts of power without overheating.

Maximum Collector-Emitter Voltage: 80 V

This high voltage rating allows the transistor to be used in a variety of applications that require higher voltage levels.

Maximum Collector Current (IC): 10 A

The high collector current rating makes this transistor suitable for applications that require switching high currents.

Nominal Transition Frequency (fT): 3 MHz

The high transition frequency enables fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BDX34BG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Minimum DC Current Gain (hFE):

750

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BDX34BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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