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BU323ZG

Onsemi

BU323ZG by Onsemi

BU323ZG by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 350V, collector current of 10A, and power dissipation of 150W. This transistor has a min DC current gain of 500 and operates at temperatures up to 175°C.

Median Price

$1.840

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 1,000 parts In-Stock

1+ parts

$2.340

100+ parts

$2.129

1k+ parts

$1.919

10k+ parts

-

1,000

$2.340

$2.129

$1.919

-

Rochester

USA . 30 parts In-Stock

1+ parts

-

100+ parts

$1.340

1k+ parts

$1.200

10k+ parts

$1.130

30

-

$1.340

$1.200

$1.130

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,737 parts In-Stock

1+ parts

$1.425

100+ parts

-

1k+ parts

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10k+ parts

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1,737

$1.425

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-

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Chip Stock

USA . 6,800 parts In-Stock

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6,800

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Vyrian

USA . 5,343 parts In-Stock

1+ parts

-

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5,343

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Huijzer Components

Netherlands . 1,230 parts In-Stock

1+ parts

-

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1,230

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-

-

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LIBRA Elektronik GmbH

Germany . 1,047 parts In-Stock

1+ parts

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1,047

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-

-

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

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500

-

-

-

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LWI Electronics Inc

India . 358 parts In-Stock

1+ parts

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358

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Flip Electronics

USA . 90 parts In-Stock

1+ parts

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90

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VNN

France . 50 parts In-Stock

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50

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Connector Distribution Corp

USA . 10 parts In-Stock

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10

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Right Parts Inc.

USA . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 251 parts In-Stock

1+ parts

$1.270

100+ parts

-

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251

$1.270

-

-

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Corphita

USA . 979 parts In-Stock

1+ parts

$1.350

100+ parts

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979

$1.350

-

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Corohmni

South Africa . 298 parts In-Stock

1+ parts

$1.500

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298

$1.500

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$2.340

100+ parts

$2.129

1k+ parts

$1.919

10k+ parts

-

1,000

$2.340

$2.129

$1.919

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AZTECH Wire

Italy . 664 parts In-Stock

1+ parts

$21.630

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664

$21.630

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SupplyDigital Components

Austria . 2,976 parts In-Stock

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2,976

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Problanco Electronics

Mexico . 2,084 parts In-Stock

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2,084

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Kulean Microsystems

USA . 1,369 parts In-Stock

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1,369

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Perfect Parts

USA . 850 parts In-Stock

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850

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UHIMA Technologies

Türkiye . 666 parts In-Stock

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666

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TANS Electronics

Latvia . 264 parts In-Stock

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264

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Netroflash

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of innovation with the BU323ZG by Onsemi, a top-tier manufacturer known for delivering quality products. This Power Bipolar Junction Transistor (BJT) is perfect for switching applications, offering a seamless performance with its NPN configuration and built-in diode and resistor. The BU323ZG provides customers with reliability and efficiency, thanks to its high power dissipation capacity of 150W and maximum collector current of 10A. Trust in Onsemi to bring you cutting-edge technology that pushes boundaries and drives progress in various industries.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used for general purpose transistor applications, making it versatile for a variety of circuits.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

This configuration allows for higher current gain and improved performance in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient control over the flow of current.

Maximum Power Dissipation: 150 W

Capable of handling high power levels without overheating, ensuring reliable operation.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Transistor Element Material: SILICON

Silicon transistors offer superior performance and reliability compared to other materials.

Maximum Collector Current: 10 A

Capable of handling high current loads, making it suitable for power applications.

Nominal Transition Frequency: 2 MHz

Allows for fast switching speeds and high frequency operation, ideal for applications requiring quick response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU323ZG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BU323ZG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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