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BU323Z

Onsemi

BU323Z by Onsemi

BU323Z by Onsemi is a NPN Power BJT with 150W power dissipation, 350V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor in a rectangular package suitable for flange mount installations.

Median Price

$1.070

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 60 parts In-Stock

1+ parts

-

100+ parts

$1.070

1k+ parts

$0.888

10k+ parts

$0.792

60

-

$1.070

$0.888

$0.792

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,386 parts In-Stock

1+ parts

$0.834

100+ parts

-

1k+ parts

-

10k+ parts

-

1,386

$0.834

-

-

-

Vyrian

USA . 6,145 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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6,145

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 933 parts In-Stock

1+ parts

$0.790

100+ parts

-

1k+ parts

-

10k+ parts

-

933

$0.790

-

-

-

Corohmni

South Africa . 309 parts In-Stock

1+ parts

$0.878

100+ parts

-

1k+ parts

-

10k+ parts

-

309

$0.878

-

-

-

Component Stockers USA

USA . 70 parts In-Stock

1+ parts

$0.890

100+ parts

-

1k+ parts

-

10k+ parts

-

70

$0.890

-

-

-

Native Components

USA . 793 parts In-Stock

1+ parts

$25.292

100+ parts

-

1k+ parts

-

10k+ parts

-

793

$25.292

-

-

-

Northwest PG Solutions

USA . 2,358 parts In-Stock

1+ parts

$27.821

100+ parts

$25.039

1k+ parts

-

10k+ parts

-

2,358

$27.821

$25.039

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 10,567 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10,567

-

-

-

-

TANS Electronics

Latvia . 5,870 parts In-Stock

1+ parts

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100+ parts

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5,870

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-

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Problanco Electronics

Mexico . 5,692 parts In-Stock

1+ parts

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100+ parts

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5,692

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-

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Kulean Microsystems

USA . 4,101 parts In-Stock

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4,101

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Glotronic Ltd.

UK . 3,700 parts In-Stock

1+ parts

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100+ parts

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3,700

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-

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SupplyDigital Components

Austria . 1,409 parts In-Stock

1+ parts

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100+ parts

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1,409

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UHIMA Technologies

Türkiye . 923 parts In-Stock

1+ parts

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923

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Assy Fe

Spain . 895 parts In-Stock

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895

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-

Overview

Unleash the power of innovation with the BU323Z by Onsemi. Crafted with precision and reliability, this Power Bipolar Junction Transistor (BJT) is a game-changer in the world of switching applications. With a Darlington configuration and built-in diode and resistor, the BU323Z ensures seamless performance and efficiency. Experience the quality and value that Onsemi brings to the table, offering customers unparalleled benefits and advantages. Elevate your projects with the BU323Z and witness the difference in performance and reliability. Choose excellence, choose Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring longevity and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor suitable for a wide range of switching tasks.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and the built-in diode and resistor simplify circuit design, making this transistor convenient for various applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance in tasks that require rapid on/off switching.

Maximum Power Dissipation (Abs): 150 W

With a high maximum power dissipation, this transistor can handle relatively high power levels, allowing it to be used in demanding applications.

Maximum Collector-Emitter Voltage: 350 V

The high collector-emitter voltage rating makes this transistor suitable for applications requiring high voltage handling capabilities.

Maximum Collector Current (IC): 10 A

Capable of handling high currents, making it suitable for applications that require a significant amount of current to be switched.

Nominal Transition Frequency (fT): 2 MHz

With a high nominal transition frequency, this transistor is capable of operating at high frequencies, making it suitable for fast-switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU323Z attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BU323Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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