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BU323AP

Onsemi

BU323AP by Onsemi

BU323AP by Onsemi is a NPN power BJT with 125W max power dissipation, ideal for switching applications. Featuring a Darlington configuration with built-in diode and resistor, it has a max collector-emitter voltage of 400V and max collector current of 10A. This transistor operates at up to 200 °C, making it suitable for high-power applications.

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Digiode

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Vyrian

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ACDS - Activité Composants Distribution Service

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Zilex Electronics Inc.

Canada . 10 parts In-Stock

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Huijzer Components

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LittleDiode

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Native Components

USA . 325 parts In-Stock

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Northwest PG Solutions

USA . 1,511 parts In-Stock

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SupplyDigital Components

Austria . 6,304 parts In-Stock

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Kulean Microsystems

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Perfect Parts

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TANS Electronics

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Cyclops Electronics Ltd (Excess)

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Corphita

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Glotronic Ltd.

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UHIMA Technologies

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Corohmni

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Overview

Unlock the power of reliable and efficient performance with the BU323AP by Onsemi. Manufactured by a trusted leader in the industry, this Power Bipolar Junction Transistor (BJT) offers a superior quality plastic/epoxy package with NPN polarity. Ideal for switching applications, this Darlington transistor with built-in diode and resistor provides a maximum power dissipation of 125 W, ensuring optimal functionality and longevity. With a maximum collector-emitter voltage of 400 V and a maximum collector current of 10 A, this product delivers unparalleled value and benefits to customers seeking high-performance components for their projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy material provides durability and protects the transistor components from external elements, making it suitable for long-term use.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching circuits, offering versatility in various applications.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration with built-in diode and resistor simplifies circuit design and reduces the need for additional components, saving space and cost.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient performance in controlling electrical currents.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and installation in various electronic devices and circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and facilitate easy soldering on PCBs, ensuring reliable performance.

Maximum Power Dissipation (Abs): 125 W

High power dissipation capability of 125W ensures efficient heat management, allowing the transistor to handle high power loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure and stable mounting options, ideal for applications requiring mechanical stability.

Minimum DC Current Gain (hFE): 50

Minimum DC current gain of 50 ensures reliable amplification and signal processing in electronic circuits.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this transistor can withstand high temperature environments, ensuring stable performance in demanding conditions.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating of 400V allows the transistor to handle high voltage applications, providing protection against voltage spikes and surges.

Transistor Element Material: SILICON

Silicon material in the transistor element offers high efficiency, low noise, and reliable performance in electronic circuits.

Maximum Collector Current (IC): 10 A

High collector current rating of 10A enables the transistor to handle high current loads with ease, making it suitable for power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good conductivity and solderability, providing reliable connections for seamless integration in electronic circuits.

Terminal Position: SINGLE

Single terminal position simplifies installation and connections, reducing complexity in circuit design and assembly.

Case Connection: COLLECTOR

Collector case connection offers easy access and connectivity for external components, enhancing the versatility and usability of the transistor.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this transistor can undergo reflow soldering processes without compromising its structural integrity, ensuring reliable performance in manufacturing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU323AP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BU323AP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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