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BU325

STMicroelectronics

BU325 by STMicroelectronics

STMicroelectronics BU325 is a NPN BJT transistor with max VCEsat of 1.5V, ideal for switching applications. With max IC of 3A and Ptot of 25W, it operates at up to 150°C. Featuring hFE of 30 and fT of 40MHz, it's commonly used in power electronics due to its high performance and reliability.

Median Price

$0.366

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS (Exports)

UK . 14 parts In-Stock

1+ parts

$0.190

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-

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14

$0.190

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RS Americas

USA . 14 parts In-Stock

1+ parts

$0.364

100+ parts

$0.349

1k+ parts

$0.327

10k+ parts

$0.313

14

$0.364

$0.349

$0.327

$0.313

Powell Electronics

USA . 225 parts In-Stock

1+ parts

$0.430

100+ parts

-

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-

10k+ parts

$0.370

225

$0.430

-

-

$0.370

Mouser Electronics

USA . 143 parts In-Stock

1+ parts

$0.450

100+ parts

$0.351

1k+ parts

$0.337

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-

143

$0.450

$0.351

$0.337

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DigiKey

USA . 137 parts In-Stock

1+ parts

$0.450

100+ parts

$0.370

1k+ parts

$0.360

10k+ parts

-

137

$0.450

$0.370

$0.360

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Adafruit Industries

USA . 450 parts In-Stock

1+ parts

$73.867

100+ parts

$67.219

1k+ parts

$60.571

10k+ parts

-

450

$73.867

$67.219

$60.571

-

Master Electronics

USA . 1,886 parts In-Stock

1+ parts

-

100+ parts

$0.356

1k+ parts

$0.311

10k+ parts

$0.295

1,886

-

$0.356

$0.311

$0.295

Verical

USA . 1,886 parts In-Stock

1+ parts

-

100+ parts

-

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$0.366

10k+ parts

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1,886

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-

$0.366

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Chip1Stop

Japan . 336 parts In-Stock

1+ parts

-

100+ parts

$0.071

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336

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$0.071

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Arrow

USA . 331 parts In-Stock

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331

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Distributors (In-Stock)

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Digiode

USA . 4,242 parts In-Stock

1+ parts

$0.013

100+ parts

-

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4,242

$0.013

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.280

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50

$0.280

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Electro Sonic

Canada . 1,886 parts In-Stock

1+ parts

-

100+ parts

$0.446

1k+ parts

$0.355

10k+ parts

$0.310

1,886

-

$0.446

$0.355

$0.310

IBS Electronics

USA . 1,886 parts In-Stock

1+ parts

-

100+ parts

$0.499

1k+ parts

$0.436

10k+ parts

$0.406

1,886

-

$0.499

$0.436

$0.406

Anansix

USA . 1,745 parts In-Stock

1+ parts

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North Shore Components

USA . 1,000 parts In-Stock

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Vyrian

USA . 90 parts In-Stock

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90

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Distributors (Availability)

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Corphita

USA . 2,679 parts In-Stock

1+ parts

$0.013

100+ parts

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2,679

$0.013

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Argo Parts USA

USA . 4,533 parts In-Stock

1+ parts

$0.280

100+ parts

-

1k+ parts

-

10k+ parts

$0.272

4,533

$0.280

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-

$0.272

Continental Prestige Electronics

USA . 4,094 parts In-Stock

1+ parts

$0.280

100+ parts

-

1k+ parts

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10k+ parts

$0.275

4,094

$0.280

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-

$0.275

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.280

100+ parts

-

1k+ parts

$0.266

10k+ parts

$0.261

2,000

$0.280

-

$0.266

$0.261

Allen Electronics Distributors

USA . 14 parts In-Stock

1+ parts

$0.360

100+ parts

$0.331

1k+ parts

$0.324

10k+ parts

-

14

$0.360

$0.331

$0.324

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IDEA Electronic Components Group

UK . 1,554 parts In-Stock

1+ parts

$0.473

100+ parts

-

1k+ parts

$0.426

10k+ parts

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1,554

$0.473

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$0.426

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MKK Technologies

India . 1,175 parts In-Stock

1+ parts

$0.889

100+ parts

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1,175

$0.889

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DigiPath Technology Company

USA . 1,175 parts In-Stock

1+ parts

$0.889

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1,175

$0.889

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Parana Technologies

USA . 1,632 parts In-Stock

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$0.565

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1,632

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$0.565

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Perfect Parts

USA . 83 parts In-Stock

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83

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Overview

Unlock the power of the BU325 by STMicroelectronics, a high-quality Power Bipolar Junction Transistor perfect for switching applications. With a maximum VCEsat of 1.5V and a maximum collector-emitter voltage of 200V, this NPN transistor offers reliable performance and durability. Designed with a single configuration and a flange mount package style, the BU325 is easy to install and use. Trust in STMicroelectronics' reputation for excellence and innovation in semiconductor technology, and experience the value and benefits of the BU325 in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for switching applications, making this product versatile and widely applicable.

Maximum VCEsat: 1.5 V

Low VCEsat minimizes power dissipation and improves efficiency in switching operations.

Maximum Power Dissipation (Abs): 1.2 W

With a high maximum power dissipation, this transistor can handle a range of power levels without overheating.

Maximum Collector-Emitter Voltage: 200 V

The high maximum collector-emitter voltage allows this transistor to be used in applications with higher voltage requirements.

Nominal Transition Frequency (fT): 40 MHz

The high transition frequency enables fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU325 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

3 A

Maximum Collector-Base Capacitance:

50 pF

Maximum Collector-Emitter Voltage:

200 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

25 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.5 V

Trade Compliance

BU325 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

NSN

5330-01-009-3512, 5330010093512

NIIN

010093512

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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