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BU323A

Onsemi

BU323A by Onsemi

BU323A by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 400V, max collector current of 10A, and min DC current gain of 50. This transistor has a metal package body material and operates up to 200 °C, making it suitable for high-power electronic systems.

Median Price

$26.360

Lifecycle Status

Suppliers In-Stock

9

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1k+

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American Microsemiconductor Inc.

USA . 9 parts In-Stock

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Digiode

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Vyrian

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LIBRA Elektronik GmbH

Germany . 102 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Fibra_Brandt Electronic GMBH

Germany . 10 parts In-Stock

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LittleDiode

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Resion

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GES GmbH

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Corohmni

South Africa . 242 parts In-Stock

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TANS Electronics

Latvia . 7,236 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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Kulean Microsystems

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Assy Fe

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Northwest PG Solutions

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Native Components

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UHIMA Technologies

Türkiye . 143 parts In-Stock

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Overview

Discover the BU323A by Onsemi, a top-of-the-line Power Bipolar Junction Transistor designed for switching applications. With its high-quality construction and built-in diode and resistor, this NPN Darlington transistor offers unmatched performance and reliability. Ideal for a wide range of electronic projects, the BU323A delivers exceptional value and efficiency to our customers. Trust in Onsemi's reputation for excellence and elevate your designs with the advanced capabilities of the BU323A.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide better heat dissipation and mechanical durability, making the transistor more reliable and suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, offering good amplification and switching capabilities.

Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

The Darlington configuration offers high current gain and the built-in diode and resistor simplify circuit design and reduce component count.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and efficient operation in electronic circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and placement in various circuit designs.

Terminal Form: PIN/PEG

Pin/peg terminals provide a secure connection and easy installation onto circuit boards.

No. of Terminals: 2

With only 2 terminals, the transistor is easy to integrate into circuits and reduces complexity.

Package Style (Meter): FLANGE MOUNT

Flange mount packages offer a sturdy and secure mounting option for the transistor.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures consistent and reliable amplification in circuit applications.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200 °C, this transistor can withstand high temperature environments.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage rating of 400V allows the transistor to be used in high voltage circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance and efficiency in electronic circuits.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10A, this transistor is suitable for high power circuit applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity for secure connections.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to mount and solder the transistor onto circuit boards.

Case Connection: COLLECTOR

Case connection at the collector terminal simplifies circuit design and enhances performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BU323A attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BU323A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-391-8952, 5961013918952, 5961-99-300-9370, 5961993009370, 5961-25-133-1936, 5961251331936

NIIN

013918952, 993009370, 251331936

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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