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MJE18004D2G

Onsemi

MJE18004D2G by Onsemi

MJE18004D2G by Onsemi is a NPN BJT transistor with 450V VCE, 5A IC, and 75W Ptot. Ideal for switching applications, it has a hFE of 6 and operates up to 150 °C. Its package style is flange mount with through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,844 parts In-Stock

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Digiode

USA . 2,153 parts In-Stock

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Cyclops Electronics Ltd

UK . 724 parts In-Stock

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AZTECH Wire

Italy . 302 parts In-Stock

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$21.480

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,832 parts In-Stock

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Problanco Electronics

Mexico . 7,332 parts In-Stock

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Kulean Microsystems

USA . 5,895 parts In-Stock

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TANS Electronics

Latvia . 2,087 parts In-Stock

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Corphita

USA . 1,259 parts In-Stock

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SupplyDigital Components

Austria . 954 parts In-Stock

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UHIMA Technologies

Türkiye . 378 parts In-Stock

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Corohmni

South Africa . 239 parts In-Stock

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Overview

Enhance your power switching applications with the MJE18004D2G by Onsemi. Crafted with precision and quality by a renowned manufacturer, this NPN transistor with a built-in diode offers unparalleled performance and reliability. Ideal for a wide range of applications, this power BJT provides customers with enhanced efficiency and durability. Experience seamless operation and peace of mind knowing you have a high-quality product that delivers exceptional value and benefits. Upgrade your projects with the MJE18004D2G and unlock endless possibilities in power management.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal and electrical insulation, making the transistor more reliable and durable.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching and protection against reverse currents.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring optimal performance in such scenarios.

Maximum Power Dissipation (Abs): 75 W

Capable of handling high power dissipation, making it suitable for demanding applications.

Maximum Collector-Emitter Voltage: 450 V

High collector-emitter voltage rating provides versatility in various circuit designs.

Maximum Collector Current (IC): 5 A

High collector current rating allows for handling larger loads in switching applications.

Nominal Transition Frequency (fT): 13 MHz

High transition frequency enables faster switching speeds, improving overall performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE18004D2G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN EFFICIENT ANTISATURATION NETWORK

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

450 V

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MJE18004D2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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