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MJE13005PBFREE

Central Semiconductor

MJE13005PBFREE by Central Semiconductor

MJE13005PBFREE by Central Semiconductor is a NPN BJT transistor for switching applications. It has VCEsat of 1V, IC of 4A, and hFE of 8. With max power dissipation of 75W, it operates b/w -65 to 150°C. Ideal for high-power switching circuits due to its fast rise/fall times and low collector-emitter voltage drop.

Median Price

$3.595

Lifecycle Status

EOL

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4

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Mouser Electronics

USA . 309 parts In-Stock

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$2.780

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$1.890

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$1.630

10k+ parts

$1.490

309

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$1.890

$1.630

$1.490

DigiKey

USA . 240 parts In-Stock

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$4.410

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$2.046

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240

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$2.046

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Nova Conductors

Japan . 100 parts In-Stock

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$1.530

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Vyrian

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Continental Prestige Electronics

USA . 1,695 parts In-Stock

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$1.530

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$1.499

1,695

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Argo Parts USA

USA . 1,115 parts In-Stock

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$1.530

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$1.530

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Netroflash

USA . 500 parts In-Stock

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$1.530

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$1.453

10k+ parts

$1.423

500

$1.530

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$1.453

$1.423

AZTECH Wire

Italy . 256 parts In-Stock

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$7.532

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

USA . 8,294 parts In-Stock

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Overview

Unleash the power of Central Semiconductor's MJE13005PBFREE Power Bipolar Junction Transistor (BJT) for all your switching applications. With a maximum collector-emitter voltage of 400V and a maximum collector current of 4A, this NPN transistor offers unparalleled performance and reliability. Whether you're designing industrial equipment or consumer electronics, this transistor's high DC current gain and low VCEsat ensure optimal efficiency and speed. Trust in Central Semiconductor's reputation for quality and innovation, and experience the difference with the MJE13005PBFREE.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast rise and fall times, making it efficient in turning on and off quickly.

Maximum Power Dissipation (Abs): 75 W

With a maximum power dissipation of 75W, this transistor can handle high power levels without overheating, ensuring reliable performance.

Maximum Collector-Emitter Voltage: 400 V

The high collector-emitter voltage rating makes this transistor suitable for high voltage applications, providing a wide voltage range for operation.

Nominal Transition Frequency (fT): 4 MHz

The high nominal transition frequency of 4MHz indicates that this transistor can operate at high frequencies, making it ideal for fast switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) MJE13005PBFREE attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Central Semiconductor

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Base Capacitance:

130 pF

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

Maximum Fall Time (tf):

900 ns

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

2 W

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

700 ns

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

4900 ns

Maximum Turn On Time (ton):

800 ns

Maximum VCEsat:

1 V

Trade Compliance

MJE13005PBFREE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Central Semiconductor

At Central Semiconductor, we’re serious about discrete semiconductors. Our business is the pursuit of perfection in the devices we manufacture; the delivery of our products; and the services we provide; all the time, every time. To suit varying applications, our products are available in surface mount, through-hole, and bare die. We produce a wide range of standard devices, but we excel in custom, special, and other niche products and services. As we listen to customers and monitor industry changes, our product design teams are constantly developing new products to meet customers’ ever-changing requirements, as well as industry trends. Discretes are our only business. We maintain an extensive inventory of raw materials and finished goods so customers don't wait weeks or months for what they need. We welcome smaller quantity and special orders that our competitors brush aside, and we're always eager to explore inquiries for non-standard requirements. Every customer has a skilled Customer Relationship Manager/Regional Sales Manager team to coordinate all needs. Customer-focused, obsessed with quality, and dedicated to your complete satisfaction; that's what makes us different.

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