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BCP56-16-AU_R2_000A1

Panjit International

BCP56-16-AU_R2_000A1 by Panjit International

Panjit International's BCP56-16-AU_R2_000A1 is a NPN Power BJT with 100V VCE, 1A IC, and 40 hFE. Ideal for AEC-Q101 compliant automotive applications due to its small outline package and high transition frequency of 100MHz.

Median Price

$0.205

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 59 parts In-Stock

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$0.113

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Maritex

Poland . 2,500 parts In-Stock

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$0.297

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$0.079

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$0.079

Vyrian

USA . 2,937 parts In-Stock

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VNN

France . 884 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$0.113

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$0.107

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$0.105

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$0.113

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GreenTree Electronics

Israel . 12,842 parts In-Stock

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Perfect Parts

USA . 5,169 parts In-Stock

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Overview

Upgrade your power electronics with the BCP56-16-AU_R2_000A1 by Panjit International. Crafted with precision and excellence, this NPN Power Bipolar Junction Transistor offers reliable performance and durability. Ideal for a variety of applications, this transistor provides a maximum collector-emitter voltage of 100V and a maximum collector current of 1A. With its high-quality construction and trusted brand reputation, trust Panjit International to deliver value and efficiency to your projects. Experience the difference with the BCP56-16-AU_R2_000A1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good electrical insulation and protection for the transistor, ensuring reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for a wide range of applications.

Configuration: SINGLE

Simplifies circuit design by requiring only one transistor, reducing component count and overall complexity.

Surface Mount: YES

Enables easy and secure mounting on PCBs, saving space and allowing for automated assembly processes.

Package Shape: RECTANGULAR

Facilitates efficient placement on circuit boards, optimizing space utilization and improving overall design aesthetics.

Terminal Form: GULL WING

Offers secure and reliable connections during assembly, reducing the risk of electrical discontinuity and ensuring consistent performance.

No. of Terminals: 4

Provides multiple connection points for specific circuit configurations, enhancing flexibility in design and functionality.

Package Style (Meter): SMALL OUTLINE

Compact form factor allows for high-density mounting, ideal for applications with limited space and requirement for miniaturization.

Minimum DC Current Gain (hFE): 40

Ensures stable and predictable amplification of current in the circuit, enabling accurate signal processing and control.

Maximum Collector-Emitter Voltage: 100 V

Handling higher voltages allows for more versatility in circuit design, accommodating various power requirements.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance characteristics, such as low leakage currents and high switching speeds.

Maximum Collector Current (IC): 1 A

Capability to handle higher currents enables the transistor to power a range of electronic devices and components effectively.

Terminal Position: DUAL

Dual terminals offer additional connection options, enabling more flexible circuit configurations and compatibility with different setups.

Case Connection: COLLECTOR

Collector connection allows for efficient heat dissipation, keeping the transistor within safe operating temperatures for reliable performance.

Reference Standard: AEC-Q101

Compliance with automotive quality standards ensures reliability in demanding environments, making this product suitable for automotive applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables fast switching speeds, making the transistor suitable for high-frequency applications such as RF amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP56-16-AU_R2_000A1 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Panjit International

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCP56-16-AU_R2_000A1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Panjit International

PANJIT is a public company founded in May 1986. We are a semi-conductor manufacturer, and have IATF-16949,ESD S20.20,ISO-9001,ISO-14001,ISO-45001 certifications etc.. PANJIT is vertically integrated with IDM design capability, own wafer foundries and state-of-art production lines. With insight observation and core technologies, PANJIT is able to continuously launch low profile products and accurate power rating devices which conforms to the customer needs. PANJIT commits to serve customers with the best service, thus we have established sales offices worldwide. We have sites in North America, Germany, Korea and China which allows us to provide better and prompt service.

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