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BCP53-10,115

NXP Semiconductors

BCP53-10,115 by NXP Semiconductors

BCP53-10,115 by NXP is a PNP BJT transistor with 1A IC and 80V VCE. It has a hFE of 63, fT of 145MHz, and can handle up to 1.5W power dissipation. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package style.

Median Price

$0.168

Lifecycle Status

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1k+

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Chip1Stop

Japan . 548 parts In-Stock

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Arrow

USA . 8,906 parts In-Stock

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Farnell

UK . 2,552 parts In-Stock

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Mouser Electronics

USA . 5 parts In-Stock

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Adafruit Industries

USA . 1,000 parts In-Stock

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Rochester

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EBV Elektronik

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Element14

Singapore . 5,288 parts In-Stock

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Verical

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Nova Conductors

Japan . 10 parts In-Stock

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Digiode

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Chip Stock

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NAC Semi

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VNN

France . 3,611 parts In-Stock

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IBS Electronics

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Vyrian

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Schukat

Germany . 1,100 parts In-Stock

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Anansix

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ComSIT Distribution GmbH

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Semicontronic

India . 11,857 parts In-Stock

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Ampacity Inc.

Singapore . 4,585 parts In-Stock

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Argo Parts USA

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Corphita

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AZTECH Wire

Italy . 7,835 parts In-Stock

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Aztec Data Supply Inc.

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Corohmni

South Africa . 106 parts In-Stock

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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Perfect Parts

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Eastek

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QUARKTWIN TECHNOLOGY LTD

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Continental Prestige Electronics

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UNI Independent Distributors

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Authorized Procurement Solutions

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Supply Digital

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Glotronic Ltd.

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Kepictronics

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Overview

Elevate your power management solutions with the BCP53-10,115 from NXP Semiconductors. Manufactured to the highest standards, this PNP Power Bipolar Junction Transistor offers unparalleled performance in switching applications. With a maximum collector-emitter voltage of 80V and a minimum DC current gain of 63, this transistor delivers reliability and efficiency like no other. Whether you're designing automotive electronics or industrial controls, the BCP53-10,115 is the perfect choice for superior functionality and long-term durability. Experience the difference with NXP Semiconductors today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the transistor.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high power applications and can handle larger currents compared to NPN transistors.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient on/off transitions.

Surface Mount: YES

Suitable for automated assembly processes and compact circuit design.

Maximum Power Dissipation: 1.5 W

Can handle moderate power levels, suitable for various electronic devices.

Maximum Collector-Emitter Voltage: 80 V

Capable of handling higher voltage levels, making it suitable for a wide range of applications.

Maximum Collector Current: 1 A

Can handle relatively high currents, making it suitable for power applications.

Nominal Transition Frequency: 145 MHz

High transition frequency allows for fast switching speeds, important in high frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP53-10,115 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

63

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

AEC-Q101; IEC-60134

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCP53-10,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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