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BCP5316TA

Diodes Incorporated

BCP5316TA by Diodes Incorporated

BCP5316TA by Diodes Inc. is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.5V, hFE of 100, and can handle up to 1A IC. With a max operating temp of 150°C, it's ideal for automotive electronics due to AEC-Q101 compliance.

Median Price

$0.163

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

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Arrow

USA . 1,145 parts In-Stock

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$0.163

100+ parts

$0.062

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$0.026

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1,145

$0.163

$0.062

$0.026

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Mouser Electronics

USA . 8 parts In-Stock

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$0.560

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$0.190

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$0.119

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8

$0.560

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$0.119

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Adafruit Industries

USA . 600 parts In-Stock

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$1.306

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$1.188

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$1.071

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600

$1.306

$1.188

$1.071

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Verical

USA . 36,000 parts In-Stock

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$0.051

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$0.051

Farnell

UK . 965 parts In-Stock

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$0.115

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$0.082

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$0.080

965

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$0.082

$0.080

Distributors (In-Stock)

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Nova Conductors

Japan . 880 parts In-Stock

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$0.093

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880

$0.093

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Maritex

Poland . 734 parts In-Stock

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$0.358

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$0.094

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$0.075

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734

$0.358

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$0.075

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Bristol Electronics

USA . 890 parts In-Stock

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$0.600

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$0.300

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$0.120

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890

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Ozdisan Elektronik

Türkiye . 80,131 parts In-Stock

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$56.010

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NAC Semi

USA . 222,000 parts In-Stock

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Chip Stock

USA . 38,000 parts In-Stock

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Vyrian

USA . 14,970 parts In-Stock

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Micros

Poland . 13,000 parts In-Stock

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$0.050

13,000

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$0.050

IBS Electronics

USA . 12,000 parts In-Stock

1+ parts

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$0.100

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$0.082

12,000

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$0.100

$0.082

Cogito LLC

Ukraine . 2,770 parts In-Stock

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2,770

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Rutronik

Germany . 2,000 parts In-Stock

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$0.110

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$0.078

2,000

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$0.110

$0.078

LIBRA Elektronik GmbH

Germany . 1,657 parts In-Stock

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VNN

France . 1,462 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,000 parts In-Stock

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ComSIT USA

USA . 1,000 parts In-Stock

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Dan-Mar Components

USA . 1,000 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 731 parts In-Stock

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Semicontronic

India . 13,732 parts In-Stock

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$0.030

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Ampacity Inc.

Singapore . 12,542 parts In-Stock

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$0.040

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Modulus Dynamics

Lithuania . 22,438 parts In-Stock

1+ parts

$0.086

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$0.086

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$0.086

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22,438

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Corohmni

South Africa . 469 parts In-Stock

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$0.086

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469

$0.086

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Aranea Global

USA . 50 parts In-Stock

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$0.091

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$0.087

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50

$0.091

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$0.087

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Argo Parts USA

USA . 2,830 parts In-Stock

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$0.091

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$0.088

2,830

$0.091

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$0.088

Continental Prestige Electronics

USA . 2,388 parts In-Stock

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$0.091

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$0.089

2,388

$0.091

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$0.089

Aztec Data Supply Inc.

USA . 237 parts In-Stock

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$0.808

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237

$0.808

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Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$1.306

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$1.188

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$1.071

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600

$1.306

$1.188

$1.071

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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GreenTree Electronics

Israel . 123,000 parts In-Stock

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Glotronic Ltd.

UK . 58,400 parts In-Stock

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Perfect Parts

USA . 21,911 parts In-Stock

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Lixinc

USA . 16,988 parts In-Stock

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RC Electronics

USA . 5,700 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,426 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Futuretech Components

Singapore . 2,904 parts In-Stock

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2,904

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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Assy Fe

Spain . 800 parts In-Stock

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800

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Bastille Electronics

Australia . 78 parts In-Stock

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78

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Overview

Looking for a reliable power bipolar junction transistor? Look no further than the BCP5316TA by Diodes Incorporated. As a trusted manufacturer, Diodes Incorporated delivers top-notch quality products that are perfect for switching applications. The BCP5316TA offers customers unmatched value with its high DC current gain and low collector-emitter voltage saturation. With a maximum operating temperature of 150°C and a peak reflow temperature of 260°C, this transistor is designed to withstand tough conditions while providing exceptional performance. Upgrade your electronics with the BCP5316TA and experience the benefits of superior quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and cost-effective, while still providing adequate protection for the internal components.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration with other PNP components in the circuit, simplifying the design process.

Configuration: SINGLE

The single configuration makes it easy to use and less complex in circuit design, reducing potential errors during installation.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast response times and efficient operation in switching circuits.

Maximum VCEsat: 0.5 V

The low VCEsat value of 0.5V indicates minimal power loss across the transistor, making it energy-efficient and suitable for high-performance applications.

Surface Mount: YES

Being surface mountable, this transistor is easy to integrate into circuit boards, saving space and allowing for automated assembly processes.

Maximum Power Dissipation (Abs): 2 W

With a maximum power dissipation of 2W, this transistor can handle high power levels without overheating or failing, ensuring reliable performance.

Package Shape: RECTANGULAR

The rectangular package shape is space-efficient and allows for easy placement on circuit boards, optimizing board layout and reducing overall size.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections to the circuit board, minimizing the risk of disconnection or damage during operation or assembly.

No. of Terminals: 4

Having 4 terminals provides flexibility in circuit design and allows for additional connections or features to be implemented when needed.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures without compromising performance, making it suitable for industrial and automotive applications.

Maximum Collector-Base Capacitance: 25 pF

The low collector-base capacitance of 25pF ensures fast switching speeds and minimal distortion in high-frequency applications, making this transistor ideal for RF circuits.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating of 80V allows for operation in high-voltage circuits without the risk of breakdown, enhancing the reliability and robustness of the transistor.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its reliability and high performance, ensuring stable operation and long-term durability of the transistor.

Minimum Operating Temperature: -65 °C

With a minimum operating temperature of -65°C, this transistor can function in extreme cold environments without loss of performance, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 1 A

The high collector current rating of 1A allows for handling high current loads without overheating, ensuring reliable operation in demanding applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides a durable and corrosion-resistant surface, ensuring long-term reliability and stable electrical connections.

Terminal Position: DUAL

Having dual terminal positions allows for flexibility in circuit design and layout, enabling easy integration into various types of circuits and configurations.

Case Connection: COLLECTOR

The collector case connection simplifies the circuit layout and provides a secure connection to the collector terminal, enhancing the overall reliability and performance of the transistor.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this transistor can withstand the heat of the reflow soldering process, ensuring reliable and durable solder joints during assembly.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 automotive standard ensures that this transistor meets the stringent requirements for reliability and performance in automotive applications, making it a trusted choice for automotive electronics.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency of 150MHz indicates fast response times and excellent high-frequency performance, making this transistor suitable for high-speed digital and RF applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BCP5316TA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

25 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

BCP5316TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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