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NJVMJD45H11RLG-VF01

Onsemi

NJVMJD45H11RLG-VF01 by Onsemi

NJVMJD45H11RLG-VF01 by Onsemi is a PNP BJT transistor for switching applications. It has a hFE of 40, Vce of 80V, and Ic of 8A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and fT of 90MHz.

Median Price

$0.490

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 4,200 parts In-Stock

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$0.332

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$0.332

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Flip Electronics (Authorized)

USA . 1,800 parts In-Stock

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Verical

USA . 1,147 parts In-Stock

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$0.509

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$0.454

1,147

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$0.509

$0.454

Rochester

USA . 1,147 parts In-Stock

1+ parts

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$0.490

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$0.407

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$0.363

1,147

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$0.490

$0.407

$0.363

Distributors (In-Stock)

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Digiode

USA . 990 parts In-Stock

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$0.475

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990

$0.475

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Vyrian

USA . 8,865 parts In-Stock

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USA . 1,800 parts In-Stock

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Corphita

USA . 2,041 parts In-Stock

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$0.450

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2,041

$0.450

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Corohmni

South Africa . 68 parts In-Stock

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$0.500

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68

$0.500

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AZTECH Wire

Italy . 591 parts In-Stock

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$20.330

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591

$20.330

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QUARKTWIN TECHNOLOGY LTD

USA . 20,894 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 7,685 parts In-Stock

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Microchip USA

USA . 4,732 parts In-Stock

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SupplyDigital Components

Austria . 4,228 parts In-Stock

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Problanco Electronics

Mexico . 3,420 parts In-Stock

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Kulean Microsystems

USA . 2,472 parts In-Stock

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UHIMA Technologies

Türkiye . 160 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the NJVMJD45H11RLG-VF01 Power Bipolar Junction Transistor by Onsemi. Manufactured with top-notch quality and designed for switching applications, this PNP transistor offers unparalleled reliability and efficiency. Its small outline package shape and gull wing terminal form make it ideal for surface-mounted applications. With a maximum collector-emitter voltage of 80V and a high DC current gain of 40, this transistor provides excellent functionality while meeting AEC-Q101 standards. Trust Onsemi to deliver cutting-edge technology that elevates your products to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor versatile and suitable for a wide range of switching needs.

Configuration: SINGLE

Simplified design with a single transistor configuration makes it easy to use and integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance when used in such scenarios.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and making it suitable for compact designs.

Package Shape: RECTANGULAR

Rectangular shape provides a standard form factor for easy handling and fitting in various PCB layouts.

No. of Terminals: 2

Simple 2-terminal configuration simplifies the circuit design and connectivity.

Minimum DC Current Gain (hFE): 40

High minimum DC current gain ensures stable and reliable amplification in switching applications.

Maximum Collector-Emitter Voltage: 80 V

Can handle high collector-emitter voltages, suitable for applications requiring higher voltage switching.

Transistor Element Material: SILICON

Silicon is known for its excellent electrical properties, ensuring high performance and reliability of the transistor.

Maximum Collector Current (IC): 8 A

High maximum collector current rating allows for handling higher currents in switching applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides good solderability and reliability in various assembly processes.

Terminal Position: SINGLE

Single terminal position simplifies the connection and mounting of the transistor in circuits.

Case Connection: COLLECTOR

Collector connection for easy integration into circuits and efficient current flow.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for short durations, making it suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable and durable solder joints during assembly.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality for automotive applications.

Nominal Transition Frequency (fT): 90 MHz

High transition frequency allows for fast switching speeds, suitable for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) NJVMJD45H11RLG-VF01 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

NJVMJD45H11RLG-VF01 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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