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2N6107G

Onsemi

2N6107G by Onsemi

2N6107G by Onsemi is a PNP BJT transistor with 40W power dissipation, 70V max collector-emitter voltage, and 7A max collector current. Ideal for switching applications, it has a min hFE of 30 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$0.410

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 1,350 parts In-Stock

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$0.410

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$0.385

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$0.348

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1,350

$0.410

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$0.348

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Digiode

USA . 117 parts In-Stock

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$0.390

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Nova Conductors

Japan . 50 parts In-Stock

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$0.742

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50

$0.742

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TME

Poland . 397 parts In-Stock

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$0.760

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$0.400

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$0.350

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397

$0.760

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Vyrian

USA . 11,317 parts In-Stock

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VNN

France . 729 parts In-Stock

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LWI Electronics Inc

India . 46 parts In-Stock

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Prism Electronics

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Ashlea Components Ltd

UK . 9 parts In-Stock

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Semicontronic

India . 1,290 parts In-Stock

1+ parts

$0.348

100+ parts

$0.339

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$0.338

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1,290

$0.348

$0.339

$0.338

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Ampacity Inc.

Singapore . 1,011 parts In-Stock

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$0.348

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$0.348

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Continental Prestige Electronics

USA . 5,567 parts In-Stock

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$0.362

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$0.355

5,567

$0.362

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$0.355

Argo Parts USA

USA . 1,927 parts In-Stock

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$0.362

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$0.351

1,927

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$0.351

Corphita

USA . 537 parts In-Stock

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$0.369

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Corohmni

South Africa . 381 parts In-Stock

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$0.380

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Aztec Data Supply Inc.

USA . 4,763 parts In-Stock

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$0.664

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4,763

$0.664

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$1.742

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$1.585

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$1.428

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2,000

$1.742

$1.585

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AZTECH Wire

Italy . 553 parts In-Stock

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$10.520

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553

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Perfect Parts

USA . 6,889 parts In-Stock

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Kulean Microsystems

USA . 5,331 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 2,918 parts In-Stock

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Problanco Electronics

Mexico . 2,149 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Kepictronics

USA . 1,700 parts In-Stock

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TANS Electronics

Latvia . 1,217 parts In-Stock

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UHIMA Technologies

Türkiye . 505 parts In-Stock

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Robosynatics

Brazil . 200 parts In-Stock

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$13.559

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$13.559

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$13.559

200

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$13.559

$13.559

$13.559

Lucentia Tech

USA . 200 parts In-Stock

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$13.559

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$13.559

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$13.559

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$13.559

Netroflash

USA . 50 parts In-Stock

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$0.727

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$0.704

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$0.690

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$0.727

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$0.690

iodParts Technologies Inc.

India . 9 parts In-Stock

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Overview

Enhance your electronic projects with the Onsemi 2N6107G power bipolar junction transistor. Manufactured by industry leader Onsemi, this PNP transistor offers reliable performance in switching applications. With a maximum power dissipation of 40W and a maximum collector current of 7A, this transistor provides high power handling capabilities. Whether you're designing amplifiers, voltage regulators, or motor controllers, the 2N6107G delivers exceptional value and efficiency. Trust Onsemi for quality components that bring your innovations to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, providing versatility in circuit design.

Configuration: SINGLE

Simplified circuit design and easy integration into electronic systems.

Transistor Application: SWITCHING

Designed for efficient switching operations, ensuring fast response and minimal power loss.

Package Shape: RECTANGULAR

Facilitates easy installation and mounting on circuit boards or heatsinks.

Maximum Power Dissipation (Abs): 40 W

Can handle high power levels without overheating, suitable for demanding applications.

Maximum Collector-Emitter Voltage: 70 V

Allows for safe operation in circuits with higher voltage requirements.

Maximum Collector Current (IC): 7 A

Capable of handling high current flows, making it suitable for power applications.

Nominal Transition Frequency (fT): 10 MHz

Provides high-speed performance for applications requiring fast switching frequencies.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N6107G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

70 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6107G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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