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2N3442G

Onsemi

2N3442G by Onsemi

The Onsemi 2N3442G is a NPN power BJT with max. collector-emitter voltage of 140V and max. collector current of 10A, ideal for switching applications. It has a min. DC current gain of 7.5 and can dissipate up to 117W power, suitable for high-power requirements in various electronic systems. With a max operating temperature of 200°C, it offers reliable performance in demanding environments.

Median Price

$4.970

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,363 parts In-Stock

1+ parts

$4.860

100+ parts

$4.760

1k+ parts

$4.670

10k+ parts

-

2,363

$4.860

$4.760

$4.670

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RS (Exports)

UK . 409 parts In-Stock

1+ parts

$4.920

100+ parts

-

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-

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409

$4.920

-

-

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Farnell

UK . 212 parts In-Stock

1+ parts

$5.020

100+ parts

$3.700

1k+ parts

$3.140

10k+ parts

-

212

$5.020

$3.700

$3.140

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DigiKey

USA . 151 parts In-Stock

1+ parts

$6.120

100+ parts

$4.505

1k+ parts

$3.234

10k+ parts

-

151

$6.120

$4.505

$3.234

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Newark

USA . 26 parts In-Stock

1+ parts

$6.460

100+ parts

$5.280

1k+ parts

$4.230

10k+ parts

-

26

$6.460

$5.280

$4.230

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Arrow

USA . 1 parts In-Stock

1+ parts

-

100+ parts

$2.881

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-

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1

-

$2.881

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 885 parts In-Stock

1+ parts

$3.904

100+ parts

-

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885

$3.904

-

-

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TME

Poland . 77 parts In-Stock

1+ parts

$6.080

100+ parts

$3.720

1k+ parts

-

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77

$6.080

$3.720

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Vyrian

USA . 7,256 parts In-Stock

1+ parts

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7,256

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ACDS - Activité Composants Distribution Service

France . 400 parts In-Stock

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400

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Bristol Electronics

USA . 137 parts In-Stock

1+ parts

-

100+ parts

$2.091

1k+ parts

$1.941

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137

-

$2.091

$1.941

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Dan-Mar Components

USA . 137 parts In-Stock

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137

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Micros

Poland . 123 parts In-Stock

1+ parts

-

100+ parts

$1.932

1k+ parts

$1.872

10k+ parts

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123

-

$1.932

$1.872

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Partservice

France . 123 parts In-Stock

1+ parts

-

100+ parts

$1.842

1k+ parts

$1.785

10k+ parts

$1.785

123

-

$1.842

$1.785

$1.785

Micros sp.j. W. Kędra i J. Lic

Poland . 103 parts In-Stock

1+ parts

-

100+ parts

$1.973

1k+ parts

$1.912

10k+ parts

$1.912

103

-

$1.973

$1.912

$1.912

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 442 parts In-Stock

1+ parts

$1.814

100+ parts

-

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-

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442

$1.814

-

-

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Corphita

USA . 84 parts In-Stock

1+ parts

$3.699

100+ parts

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84

$3.699

-

-

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Component Stockers USA

USA . 562 parts In-Stock

1+ parts

$4.040

100+ parts

$3.790

1k+ parts

-

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562

$4.040

$3.790

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AZTECH Wire

Italy . 462 parts In-Stock

1+ parts

$9.670

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462

$9.670

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Microchip USA

USA . 5,170 parts In-Stock

1+ parts

$26.455

100+ parts

$26.455

1k+ parts

$26.455

10k+ parts

$26.455

5,170

$26.455

$26.455

$26.455

$26.455

Native Components

USA . 787 parts In-Stock

1+ parts

$103.600

100+ parts

-

1k+ parts

-

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$99.456

787

$103.600

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$99.456

Northwest PG Solutions

USA . 1,611 parts In-Stock

1+ parts

$113.960

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1,611

$113.960

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A-Z Elektronik GmbH

Germany . 6,608 parts In-Stock

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6,608

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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6,500

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Problanco Electronics

Mexico . 5,789 parts In-Stock

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Kulean Microsystems

USA . 5,562 parts In-Stock

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5,562

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SupplyDigital Components

Austria . 3,752 parts In-Stock

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Perfect Parts

USA . 3,620 parts In-Stock

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TANS Electronics

Latvia . 1,995 parts In-Stock

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1,995

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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1,970

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Computer Components Inc. - USA

USA . 315 parts In-Stock

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315

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Infinite Electronics LLP (Excess)

. 132 parts In-Stock

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132

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UHIMA Technologies

Türkiye . 57 parts In-Stock

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57

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Overview

Looking for a reliable and high-quality power bipolar junction transistor (BJT) for your switching applications? Look no further than the 2N3442G by Onsemi. With a maximum collector-emitter voltage of 140V and a maximum power dissipation of 117W, this NPN transistor offers exceptional performance and reliability. Whether you're working on industrial equipment, power supplies, or automotive systems, the 2N3442G is sure to meet your needs. Trust Onsemi's reputation for excellence and choose the 2N3442G for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: METAL

The use of metal as the package body material provides durability and efficient heat dissipation, making this transistor suitable for high-power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and versatility.

Configuration: SINGLE

The single configuration simplifies circuit design and allows for easy integration into various electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and high efficiency in turning on and off.

Maximum Power Dissipation (Abs): 117 W

With a high maximum power dissipation, this transistor can handle heavy loads and operate reliably under high-power conditions.

Maximum Collector-Emitter Voltage: 140 V

The high maximum collector-emitter voltage ensures that this transistor can withstand high voltage levels, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 10 A

Capable of handling high collector currents, this transistor is ideal for applications that require high current switching.

Nominal Transition Frequency (fT): 0.08 MHz

The nominal transition frequency indicates the speed of the transistor, allowing for efficient switching and amplification in high-frequency circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N3442G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

7.5

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N3442G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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