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2N5038G

Onsemi

2N5038G by Onsemi

2N5038G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 90V, max. operating temp. of 200°C, and max. power dissipation of 140W. Ideal for switching applications due to its single configuration and high collector current capability up to 20A at a min DC current gain of 20 (hFE).

Median Price

$6.728

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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Mouser Electronics

USA . 74 parts In-Stock

1+ parts

$11.500

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74

$11.500

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DigiKey

USA . 558 parts In-Stock

1+ parts

$11.740

100+ parts

$6.129

1k+ parts

$5.679

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558

$11.740

$6.129

$5.679

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Rochester

USA . 769 parts In-Stock

1+ parts

-

100+ parts

$5.660

1k+ parts

$5.070

10k+ parts

$4.770

769

-

$5.660

$5.070

$4.770

Verical

USA . 393 parts In-Stock

1+ parts

-

100+ parts

$7.075

1k+ parts

$6.338

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$5.963

393

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$7.075

$6.338

$5.963

Flip Electronics (Authorized)

USA . 136 parts In-Stock

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136

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Master Electronics

USA . 100 parts In-Stock

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$6.380

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$5.980

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100

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$6.380

$5.980

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Arrow

USA . 1 parts In-Stock

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$4.829

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1

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$4.829

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Distributors (In-Stock)

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Digiode

USA . 88 parts In-Stock

1+ parts

$5.994

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88

$5.994

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Nova Conductors

Japan . 100 parts In-Stock

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$6.025

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100

$6.025

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VNN

France . 5,750 parts In-Stock

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5,750

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Vyrian

USA . 5,615 parts In-Stock

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5,615

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Flip Electronics

USA . 136 parts In-Stock

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136

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IBS Electronics

USA . 100 parts In-Stock

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$8.948

1k+ parts

$8.387

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100

-

$8.948

$8.387

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Distributors (Availability)

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Corohmni

South Africa . 87 parts In-Stock

1+ parts

$0.526

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87

$0.526

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$1.453

100+ parts

$1.322

1k+ parts

$1.191

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200

$1.453

$1.322

$1.191

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Ampacity Inc.

Singapore . 211 parts In-Stock

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$4.060

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$4.060

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Corphita

USA . 1,330 parts In-Stock

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$5.679

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$5.679

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Netroflash

USA . 2,000 parts In-Stock

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$6.025

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$6.025

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Component Stockers USA

USA . 1,775 parts In-Stock

1+ parts

$6.410

100+ parts

$6.020

1k+ parts

$5.440

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1,775

$6.410

$6.020

$5.440

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Lixinc

USA . 8,284 parts In-Stock

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Problanco Electronics

Mexico . 6,347 parts In-Stock

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TANS Electronics

Latvia . 6,167 parts In-Stock

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SupplyDigital Components

Austria . 5,717 parts In-Stock

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Kulean Microsystems

USA . 1,010 parts In-Stock

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UHIMA Technologies

Türkiye . 735 parts In-Stock

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735

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Perfect Parts

USA . 426 parts In-Stock

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Allen Electronics Distributors

USA . 4 parts In-Stock

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$7.252

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$5.590

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4

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$7.252

$5.590

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Overview

Unleash the power of the Onsemi 2N5038G Power BJT transistor! Manufactured by Onsemi, this high-quality NPN transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 90V and a maximum operating temperature of 200°C. With a maximum power dissipation of 140W and a nominal transition frequency of 60MHz, this transistor delivers exceptional performance and reliability. Whether you're designing industrial equipment, automotive systems, or power supplies, the 2N5038G provides unmatched value, efficiency, and versatility for all your electronic projects. Experience the difference with Onsemi's cutting-edge technology and elevate your designs to the next level!

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides high thermal conductivity, allowing for efficient heat dissipation and improved overall performance and reliability.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching applications, offering good performance and versatility.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easier to control and manage the transistor in various applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring fast response times and high efficiency when used in power control circuits.

Maximum Power Dissipation (Abs): 140 W

High maximum power dissipation allows for reliable operation under heavy load conditions, making it suitable for demanding applications.

Maximum Operating Temperature: 200 °C

Wide operating temperature range enables the transistor to perform consistently in various environments without risking damage or malfunction.

Maximum Collector-Emitter Voltage: 90 V

High maximum collector-emitter voltage rating provides flexibility in circuit design and protection against voltage spikes or surges.

Minimum Collector Current (IC): 20 A

Capable of handling high collector current, allowing for the transistor to switch and control high power loads effectively.

Nominal Transition Frequency (fT): 60 MHz

High transition frequency ensures fast switching speeds and efficient operation in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5038G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

90 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-204AA

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5038G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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