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2N5069

Texas Instruments

2N5069 by Texas Instruments

2N5069 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 88W, max. collector-emitter voltage of 80V, and max. collector current of 5A. It is used for switching applications due to its single configuration and silicon element material, operating at up to 175°C temperature.

Median Price

$7.719

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

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TEDSS.com

USA . 300 parts In-Stock

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$5.000

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$3.990

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$5.000

$3.990

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Bristol Electronics

USA . 3,078 parts In-Stock

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$10.438

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$4.523

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$4.280

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$10.438

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Vyrian

USA . 4,873 parts In-Stock

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Digiode

USA . 3,314 parts In-Stock

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Prism Electronics

USA . 98 parts In-Stock

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Electronic Expediters

USA . 40 parts In-Stock

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LWI Electronics Inc

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Elcom Components

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LittleDiode

UK . 2 parts In-Stock

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Parana Technologies

USA . 219 parts In-Stock

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$1.216

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-

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$2.006

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219

$1.216

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$2.006

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DigiPath Technology Company

USA . 1,252 parts In-Stock

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$1.339

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$1.232

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$1.339

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ChromeModa Solutions

Germany . 3,281 parts In-Stock

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$1.366

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$1.120

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IDEA Electronic Components Group

UK . 1,243 parts In-Stock

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$1.366

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$1.229

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AZTECH Wire

Italy . 527 parts In-Stock

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$16.882

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$16.882

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One Stop Electronics

USA . 488 parts In-Stock

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$51.050

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QUARKTWIN TECHNOLOGY LTD

USA . 22,404 parts In-Stock

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Microchip USA

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Corphita

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Supply Digital

USA . 1,603 parts In-Stock

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Native Components

USA . 826 parts In-Stock

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Northwest PG Solutions

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Perfect Parts

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Assy Fe

Spain . 25 parts In-Stock

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Overview

Unlock the power of reliable performance with the Texas Instruments 2N5069 Power Bipolar Junction Transistor. Manufactured with precision and expertise, this NPN transistor is perfect for switching applications, offering a seamless transition between low and high power operations. Its metal package body ensures durability and stability, while its maximum power dissipation of 88W guarantees long-lasting use. With a maximum collector-emitter voltage of 80V and a maximum collector current of 5A, this transistor delivers unmatched efficiency and versatility. Trust in Texas Instruments to bring you quality products that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: METAL

Provides excellent heat dissipation, ensuring the transistor can handle high power dissipation without overheating.

Polarity or Channel Type: NPN

Common and versatile type of BJT used in a wide range of applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in various applications.

Transistor Application: SWITCHING

Optimized for switching applications where fast response times and high efficiency are important.

Package Shape: ROUND

Compact and space-saving design that allows for easy mounting and integration into circuits.

Terminal Form: PIN/PEG

Provides a stable and secure connection for the transistor in circuit applications.

Maximum Power Dissipation (Abs): 88 W

Can handle high power dissipation levels, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and secure attachment to circuit boards or heat sinks.

Minimum DC Current Gain (hFE): 7

Ensures reliable amplification of current in the circuit.

Maximum Operating Temperature: 175 °C

Can operate efficiently in high-temperature environments without overheating.

Maximum Collector-Emitter Voltage: 80 V

Can handle high voltage levels, making it suitable for a variety of applications.

Transistor Element Material: SILICON

Provides reliable and consistent performance over a wide range of operating conditions.

Maximum Collector Current (IC): 5 A

Can handle high current levels, making it suitable for power applications.

Terminal Position: BOTTOM

Allows for easy integration into circuit designs with bottom-mounted terminals.

Case Connection: COLLECTOR

Simplifies circuit design and connections by providing a clear reference point for the collector terminal.

Nominal Transition Frequency (fT): 4 MHz

Provides high-frequency response capabilities, making it suitable for fast-switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5069 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

7

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5069 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-139-2204, 5961001392204, 5961-00-434-9299, 5961004349299, 5961-99-118-3999, 5961991183999

NIIN

001392204, 004349299, 991183999

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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