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2N5000

Texas Instruments

2N5000 by Texas Instruments

The Texas Instruments 2N5000 is a NPN Power BJT with max. power dissipation of 30W, max. collector current of 2A, and max. operating temp of 175°C. Ideal for applications requiring high power handling such as power supplies or motor control systems due to its robust design and high transition frequency of 60MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,660 parts In-Stock

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4,660

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Vyrian

USA . 4,206 parts In-Stock

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4,206

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PUI

USA . 1,892 parts In-Stock

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1,892

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Prism Electronics

USA . 26 parts In-Stock

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26

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R&J Components

USA . 2 parts In-Stock

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2

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Distributors (Availability)

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Parana Technologies

USA . 833 parts In-Stock

1+ parts

$0.934

100+ parts

-

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$1.846

10k+ parts

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833

$0.934

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$1.846

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DigiPath Technology Company

USA . 1,493 parts In-Stock

1+ parts

$1.029

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$0.947

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1,493

$1.029

$0.947

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ChromeModa Solutions

Germany . 3,258 parts In-Stock

1+ parts

$1.050

100+ parts

$0.861

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3,258

$1.050

$0.861

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IDEA Electronic Components Group

UK . 1,438 parts In-Stock

1+ parts

$1.050

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$0.945

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1,438

$1.050

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$0.945

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AZTECH Wire

Italy . 216 parts In-Stock

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$6.602

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216

$6.602

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One Stop Electronics

USA . 946 parts In-Stock

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$36.050

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946

$36.050

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QUARKTWIN TECHNOLOGY LTD

USA . 8,406 parts In-Stock

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Microchip USA

USA . 7,043 parts In-Stock

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7,043

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West Coast Incorporated

USA . 6,117 parts In-Stock

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6,117

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CPlus Electronics

USA . 4,000 parts In-Stock

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4,000

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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Supply Digital

USA . 1,665 parts In-Stock

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1,665

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Corphita

USA . 1,607 parts In-Stock

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1,607

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Northwest PG Solutions

USA . 1,186 parts In-Stock

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1,186

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Native Components

USA . 34 parts In-Stock

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34

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Perfect Parts

USA . 29 parts In-Stock

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29

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RTC Component Inc.

USA . 2 parts In-Stock

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2

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Overview

Elevate your power management solutions with the 2N5000 by Texas Instruments, a high-quality Power Bipolar Junction Transistor that offers unmatched reliability and performance. Designed to meet the demands of various applications, this NPN transistor provides superior power dissipation and a maximum collector current of 2A. With a nominal transition frequency of 60 MHz and a maximum collector-emitter voltage of 80V, the 2N5000 is the perfect choice for your power control needs. Trust in Texas Instruments' reputation for excellence and unlock the potential of your projects with the 2N5000.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides superior thermal conductivity and ruggedness, making the transistor suitable for high power applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile in various circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces component count, making the transistor easier to integrate into a system.

Package Shape: ROUND

Round shape is easy to mount and provides mechanical stability, ensuring reliable performance in different environments.

Maximum Power Dissipation (Abs): 30 W

High power dissipation capability allows the transistor to handle large power loads without overheating, ensuring long-term reliability.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount package style provides easy installation and secure mounting, making the transistor suitable for rugged industrial applications.

Minimum DC Current Gain (hFE): 15

Higher DC current gain ensures better amplification characteristics, making the transistor suitable for low-power signal amplification.

Maximum Operating Temperature: 175 °C

High operating temperature range allows the transistor to operate in harsh environments without performance degradation.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating provides a wide voltage handling capability, making the transistor suitable for various voltage levels.

Transistor Element Material: SILICON

Silicon material ensures high reliability and performance stability, making the transistor suitable for long-term operation.

Maximum Collector Current (IC): 2 A

High collector current rating allows the transistor to handle large current loads, making it suitable for power switching applications.

Terminal Position: UPPER

Upper terminal position makes it convenient for PCB layout and connections, ensuring easy integration into circuit designs.

Case Connection: ISOLATED

Isolated case connection provides electrical insulation and prevents short circuits, ensuring safe and reliable operation.

Nominal Transition Frequency (fT): 60 MHz

High transition frequency enables fast switching speed and high-frequency operation, making the transistor suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5000 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-59

JESD-30 Code:

O-MUPM-D3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5000 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-006-7138, 5961000067138, 5961-00-124-4970, 5961001244970, 5961-99-648-1161, 5961996481161

NIIN

000067138, 001244970, 996481161

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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