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2N5005

Texas Instruments

2N5005 by Texas Instruments

2N5005 by Texas Instruments is a PNP BJT with 50W power dissipation, 80V max collector-emitter voltage, and 5A max collector current. Ideal for high-power applications requiring a single configuration transistor with a min hFE of 20. Suitable for use in circuits where high switching speeds are needed due to its 70MHz fT.

Median Price

$50.000

Lifecycle Status

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19

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1k+

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Freelance Electronics

USA . 9 parts In-Stock

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$16.888

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$17.732

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Bristol Electronics

USA . 1,486 parts In-Stock

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$21.230

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$19.680

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TEDSS.com

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Ace Electronics

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American Microsemiconductor Inc.

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Vyrian

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Prism Electronics

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Manoshevitz Elec. Sales

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Sunrise Surplus Inc.

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North Shore Components

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Mil-Aero Solutions, Inc.

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Parana Technologies

USA . 1,938 parts In-Stock

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$0.465

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$1.613

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$0.465

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DigiPath Technology Company

USA . 1,158 parts In-Stock

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$0.513

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$0.472

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$0.513

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ChromeModa Solutions

Germany . 1,536 parts In-Stock

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$0.523

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$0.429

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IDEA Electronic Components Group

UK . 678 parts In-Stock

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$0.523

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$0.471

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AZTECH Wire

Italy . 226 parts In-Stock

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One Stop Electronics

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Component Stockers USA

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Microchip USA

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Montano Global Distributors

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Corphita

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Glotronic Ltd.

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Supply Digital

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Overview

Upgrade your power supply designs with the 2N5005 by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers exceptional Power Bipolar Junction Transistors that excel in various applications. The 2N5005 is a PNP transistor with a maximum collector current of 5A and a maximum power dissipation of 50W, ensuring optimal performance under high-power conditions. With a nominal transition frequency of 70MHz, this transistor offers superior efficiency and stability. Trust Texas Instruments to provide you with the best-in-class components for your power needs.

Feature Benefit Bullets

Package Body Material: METAL

Metal package body provides good heat dissipation, ensuring efficient operation and durability.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration with other PNP devices in a circuit.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Package Shape: ROUND

Round package shape is compact and allows for easy placement on a circuit board.

Terminal Form: SOLDER LUG

Solder lug terminals provide secure connections for reliable performance.

No. of Terminals: 3

Three terminals offer flexibility in connecting the transistor within a circuit.

Maximum Power Dissipation (Abs): 50 W

High maximum power dissipation allows for handling of large loads without overheating.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount package style enables easy installation and mounting on different surfaces.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain of 20 ensures reliable amplification of input signals.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for use in a wide range of environments.

Maximum Collector-Emitter Voltage: 80 V

High maximum collector-emitter voltage rating makes the transistor suitable for various applications.

Transistor Element Material: SILICON

Silicon transistor element material provides high performance and reliability.

Maximum Collector Current (IC): 5 A

High maximum collector current rating allows for handling of heavy loads.

Terminal Position: UPPER

Upper terminal position facilitates easy connection and integration within a circuit.

Case Connection: ISOLATED

Isolated case connection helps prevent interference and ensures stability in operation.

Nominal Transition Frequency (fT): 70 MHz

High nominal transition frequency enables fast switching speeds for efficient performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5005 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-59

JESD-30 Code:

O-MUPM-D3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

POST/STUD MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

SOLDER LUG

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5005 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-485-5089, 5961004855089, 5961-00-252-7945, 5961002527945, 5961-01-211-2727, 5961012112727, 5961-01-102-9451, 5961011029451

NIIN

004855089, 002527945, 012112727, 011029451

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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