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2N5067

Texas Instruments

2N5067 by Texas Instruments

2N5067 by Texas Instruments is a NPN power BJT with max. collector current of 5A, ideal for switching applications. It has a max. power dissipation of 88W and operates at up to 175°C, featuring a min DC current gain of 7 (hFE). The transistor element material is silicon, housed in a round package style with flange mount for easy installation.

Median Price

$9.434

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TEDSS.com

USA . 100 parts In-Stock

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$2.990

100+ parts

$2.290

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100

$2.990

$2.290

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Bristol Electronics

USA . 560 parts In-Stock

1+ parts

$8.378

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$3.630

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$3.435

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560

$8.378

$3.630

$3.435

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American Microsemiconductor Inc.

USA . 383 parts In-Stock

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$10.490

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383

$10.490

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Forefront Electronics and Design

USA . 3 parts In-Stock

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$24.500

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$24.500

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Vyrian

USA . 7,691 parts In-Stock

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7,691

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Digiode

USA . 1,894 parts In-Stock

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Electronic Expediters

USA . 292 parts In-Stock

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Prism Electronics

USA . 54 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 10 parts In-Stock

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10

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Elcom Components

USA . 9 parts In-Stock

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9

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ACDS - Activité Composants Distribution Service

France . 8 parts In-Stock

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ECAB

Sweden . 6 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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ABC Electronics Ltd.

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Distributors (Availability)

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Parana Technologies

USA . 218 parts In-Stock

1+ parts

$0.955

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$1.857

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218

$0.955

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$1.857

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DigiPath Technology Company

USA . 1,520 parts In-Stock

1+ parts

$1.052

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$0.967

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1,520

$1.052

$0.967

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IDEA Electronic Components Group

UK . 2,201 parts In-Stock

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$1.073

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$0.966

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$1.073

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$0.966

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ChromeModa Solutions

Germany . 1,922 parts In-Stock

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$1.073

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$0.880

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$1.073

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Native Components

USA . 904 parts In-Stock

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$1.390

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904

$1.390

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Northwest PG Solutions

USA . 816 parts In-Stock

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$1.529

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816

$1.529

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AZTECH Wire

Italy . 223 parts In-Stock

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$14.942

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One Stop Electronics

USA . 1,108 parts In-Stock

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$54.050

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Microchip USA

USA . 5,001 parts In-Stock

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$166.704

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Component Stockers USA

USA . 100 parts In-Stock

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$918.710

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Corphita

USA . 3,894 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Supply Digital

USA . 2,287 parts In-Stock

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Perfect Parts

USA . 38 parts In-Stock

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RTC Component Inc.

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Overview

Looking for a reliable and high-quality power bipolar junction transistor? Look no further than the 2N5067 by Texas Instruments. With a proven track record of excellence, Texas Instruments delivers top-notch products that meet the needs of various applications. The 2N5067 is perfect for switching applications, offering a maximum collector current of 5A and a maximum power dissipation of 88W. Its NPN polarity and single configuration make it versatile and easy to use. Trust Texas Instruments to provide you with the quality and performance you need for your next project!

Feature Benefit Bullets

Package Body Material: METAL

Metal packages offer better thermal conductivity and higher durability, making this transistor ideal for applications requiring efficient heat dissipation and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their high efficiency and faster switching speeds.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures consistent performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient operation and fast response times.

Maximum Power Dissipation (Abs): 88 W

High maximum power dissipation allows this transistor to handle higher power loads, making it suitable for demanding applications.

Package Shape: ROUND

Round package shape facilitates easier mounting and handling in certain applications.

Terminal Form: PIN/PEG

Pin/peg terminal form ensures secure connections and ease of installation.

No. of Terminals: 2

Having only 2 terminals simplifies circuit layout and connection, making it easier to integrate into a design.

Maximum Collector-Emitter Voltage: 40 V

High maximum collector-emitter voltage allows for the handling of higher voltage levels, increasing the versatility of the transistor.

Maximum Collector Current (IC): 5 A

High maximum collector current enables this transistor to handle higher current loads, making it suitable for power applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5067 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

7

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5067 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-007-7436, 5961000077436

NIIN

000077436

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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