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2N5087PBFREE

Central Semiconductor

2N5087PBFREE by Central Semiconductor

2N5087PBFREE by Central Semiconductor is a PNP BJT with VCEsat of 0.3V, hFE of 250, and IC of 0.05A. Ideal for amplifier applications due to its high gain and low saturation voltage. Operates in temperatures ranging from -65°C to 150°C, making it suitable for various environments.

Median Price

$0.534

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Mouser Electronics

USA . 18,829 parts In-Stock

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$0.770

100+ parts

$0.308

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$0.211

10k+ parts

$0.161

18,829

$0.770

$0.308

$0.211

$0.161

DigiKey

USA . 3,935 parts In-Stock

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$0.770

100+ parts

$0.307

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$0.211

10k+ parts

$0.156

3,935

$0.770

$0.307

$0.211

$0.156

Arrow

USA . 296 parts In-Stock

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100+ parts

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$0.201

10k+ parts

$0.141

296

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$0.141

Verical

USA . 296 parts In-Stock

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$0.297

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296

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$0.297

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Flip Electronics

USA . 4,190 parts In-Stock

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Nova Conductors

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50

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Vyrian

USA . 6,601 parts In-Stock

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6,601

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Continental Prestige Electronics

USA . 4,663 parts In-Stock

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$0.191

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$0.187

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$0.187

Argo Parts USA

USA . 3,473 parts In-Stock

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$0.191

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$0.185

3,473

$0.191

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$0.185

Aztec Data Supply Inc.

USA . 1,110 parts In-Stock

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$1.860

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Netroflash

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$0.187

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$0.181

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$0.177

100

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$0.187

$0.181

$0.177

Overview

Elevate your electronic projects with the 2N5087PBFREE from Central Semiconductor. Manufactured with precision and expertise, this PNP Power Bipolar Junction Transistor is a game-changer in amplifier applications. With a maximum VCEsat of 0.3V and a minimum DC current gain of 250, this product offers unparalleled performance and reliability. Whether you're a seasoned professional or a DIY enthusiast, the 2N5087PBFREE delivers exceptional value and versatility. Upgrade your designs today with this top-of-the-line component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for complementary pairing with NPN transistors in circuits.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: AMPLIFIER

Ideal for amplifier circuits, offering good signal amplification capabilities.

Maximum VCEsat: 0.3 V

Low VCEsat minimizes power loss and improves efficiency in operation.

Terminal Form: WIRE

Ease of connection and installation.

Maximum Power Dissipation (Abs): 1.5 W

Ability to handle high power levels without overheating.

Maximum Power Dissipation Ambient: 1.5 W

Maintains stability and performance under varying ambient conditions.

Minimum DC Current Gain (hFE): 250

Provides high current gain for efficient signal amplification.

Maximum Operating Temperature: 150 °C

Suitable for applications that require stable operation at elevated temperatures.

Maximum Collector-Base Capacitance: 4 pF

Low capacitance for minimal signal distortion.

Maximum Collector-Emitter Voltage: 50 V

Handles high voltages with ease, providing protection against voltage spikes.

Terminal Finish: MATTE TIN OVER NICKEL

Corrosion-resistant finish for long-term reliability.

Nominal Transition Frequency (fT): 40 MHz

High frequency response for fast switching and signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5087PBFREE attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Central Semiconductor

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

1.5 W

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2N5087PBFREE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Central Semiconductor

At Central Semiconductor, we’re serious about discrete semiconductors. Our business is the pursuit of perfection in the devices we manufacture; the delivery of our products; and the services we provide; all the time, every time. To suit varying applications, our products are available in surface mount, through-hole, and bare die. We produce a wide range of standard devices, but we excel in custom, special, and other niche products and services. As we listen to customers and monitor industry changes, our product design teams are constantly developing new products to meet customers’ ever-changing requirements, as well as industry trends. Discretes are our only business. We maintain an extensive inventory of raw materials and finished goods so customers don't wait weeks or months for what they need. We welcome smaller quantity and special orders that our competitors brush aside, and we're always eager to explore inquiries for non-standard requirements. Every customer has a skilled Customer Relationship Manager/Regional Sales Manager team to coordinate all needs. Customer-focused, obsessed with quality, and dedicated to your complete satisfaction; that's what makes us different.

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