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2N5068

Texas Instruments

2N5068 by Texas Instruments

2N5068 by Texas Instruments is a NPN power BJT with max. collector-emitter voltage of 60V, max. collector current of 5A, and max. power dissipation of 88W. Ideal for switching applications due to its single configuration and high transition frequency of 4MHz in a round package shape.

Median Price

$5.600

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 1 parts In-Stock

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$5.070

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$5.070

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Bristol Electronics

USA . 350 parts In-Stock

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$5.600

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$2.426

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$2.296

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350

$5.600

$2.426

$2.296

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TEDSS.com

USA . 37 parts In-Stock

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$12.000

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$10.000

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Vyrian

USA . 6,342 parts In-Stock

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Digiode

USA . 3,914 parts In-Stock

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ECAB

Sweden . 47 parts In-Stock

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R&J Components

USA . 25 parts In-Stock

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Elcom Components

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LittleDiode

UK . 11 parts In-Stock

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Tech-Mark Corp

USA . 4 parts In-Stock

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GES GmbH

Germany . 2 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 342 parts In-Stock

1+ parts

$0.089

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$0.085

342

$0.089

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$0.085

Northwest PG Solutions

USA . 2,177 parts In-Stock

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$0.098

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$0.086

2,177

$0.098

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$0.086

Parana Technologies

USA . 1,785 parts In-Stock

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$1.287

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$2.044

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1,785

$1.287

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$2.044

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DigiPath Technology Company

USA . 575 parts In-Stock

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$1.417

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$1.304

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$1.417

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IDEA Electronic Components Group

UK . 2,186 parts In-Stock

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$1.446

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$1.301

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ChromeModa Solutions

Germany . 19 parts In-Stock

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$1.446

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$1.186

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AZTECH Wire

Italy . 687 parts In-Stock

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$5.658

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One Stop Electronics

USA . 130 parts In-Stock

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$43.050

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QUARKTWIN TECHNOLOGY LTD

USA . 27,201 parts In-Stock

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Microchip USA

USA . 5,991 parts In-Stock

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Corphita

USA . 3,165 parts In-Stock

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Supply Digital

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Assy Fe

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Overview

Unlock the power of reliable and efficient switching with the Texas Instruments 2N5068 Power Bipolar Junction Transistor. Manufactured by a trusted leader in electronics, this NPN transistor offers unparalleled quality and performance for your applications. With a maximum collector current of 5A and a maximum power dissipation of 88W, this transistor is ideal for a wide range of switching tasks. Trust in Texas Instruments to deliver the value and benefits you need for your next project.

Feature Benefit Bullets

Package Body Material: METAL

The metal package body material provides excellent thermal conductivity, allowing for efficient heat dissipation and ensuring the transistor operates at a stable temperature.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good switching speeds and low noise performance.

Configuration: SINGLE

The single configuration makes it easy to integrate this transistor into circuit designs, simplifying the overall setup.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor delivers fast switching speeds and reliable performance in such scenarios.

Package Shape: ROUND

The round package shape allows for easy mounting and installation in various electronic devices.

Terminal Form: PIN/PEG

The pin/peg terminal form provides secure connections and ease of soldering, ensuring reliable electrical contact.

Maximum Power Dissipation (Abs): 88 W

With a high maximum power dissipation of 88W, this transistor can handle large loads and operate at high power levels without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers stability and secure mounting, making it suitable for rugged environments or heavy-duty applications.

Minimum DC Current Gain (hFE): 7

The minimum DC current gain of 7 ensures consistent and reliable amplification of signals, making this transistor ideal for various circuit designs.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this transistor can withstand high-temperature environments and operate reliably under extreme conditions.

Maximum Collector-Emitter Voltage: 60 V

The high maximum collector-emitter voltage of 60V allows for versatile use in a wide range of circuits and applications.

Transistor Element Material: SILICON

Silicon transistors are known for their high performance, reliability, and efficiency, making this product a durable and long-lasting choice.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, this transistor can handle high current loads and deliver reliable performance in power applications.

Terminal Position: BOTTOM

The bottom terminal position allows for easy mounting and connections, simplifying the installation process for circuit designs.

Case Connection: COLLECTOR

The case connection to the collector ensures efficient heat dissipation and reliable performance, making this transistor suitable for high-power applications.

Nominal Transition Frequency (fT): 4 MHz

With a nominal transition frequency of 4MHz, this transistor provides excellent amplification and switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) 2N5068 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

7

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5068 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-107-0737, 5961001070737, 5961-99-763-8005, 5961997638005

NIIN

001070737, 997638005

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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