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BUL642D2G

Onsemi

BUL642D2G by Onsemi

BUL642D2G by Onsemi is a NPN Power BJT with 440V VCEO, 3A IC, and 75W Ptot. Ideal for applications requiring high power dissipation in a compact package. Suitable for use in various electronic devices due to its high collector current and temperature capabilities.

Median Price

$0.862

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,350 parts In-Stock

1+ parts

-

100+ parts

$0.846

1k+ parts

$0.702

10k+ parts

$0.626

1,350

-

$0.846

$0.702

$0.626

Verical

USA . 1,350 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.877

10k+ parts

-

1,350

-

-

$0.877

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,376 parts In-Stock

1+ parts

$0.658

100+ parts

-

1k+ parts

-

10k+ parts

-

1,376

$0.658

-

-

-

Vyrian

USA . 6,316 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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6,316

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 618 parts In-Stock

1+ parts

$0.395

100+ parts

-

1k+ parts

-

10k+ parts

$0.379

618

$0.395

-

-

$0.379

Northwest PG Solutions

USA . 109 parts In-Stock

1+ parts

$0.435

100+ parts

-

1k+ parts

-

10k+ parts

$0.383

109

$0.435

-

-

$0.383

Ampacity Inc.

Singapore . 1,175 parts In-Stock

1+ parts

$0.590

100+ parts

-

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-

10k+ parts

-

1,175

$0.590

-

-

-

Corphita

USA . 305 parts In-Stock

1+ parts

$0.624

100+ parts

-

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-

305

$0.624

-

-

-

Corohmni

South Africa . 51 parts In-Stock

1+ parts

$0.693

100+ parts

-

1k+ parts

-

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51

$0.693

-

-

-

Component Stockers USA

USA . 1,648 parts In-Stock

1+ parts

$0.700

100+ parts

$0.660

1k+ parts

$0.600

10k+ parts

-

1,648

$0.700

$0.660

$0.600

-

AZTECH Wire

Italy . 274 parts In-Stock

1+ parts

$18.320

100+ parts

-

1k+ parts

-

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274

$18.320

-

-

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

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100+ parts

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 12,675 parts In-Stock

1+ parts

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12,675

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SupplyDigital Components

Austria . 7,360 parts In-Stock

1+ parts

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100+ parts

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7,360

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-

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TANS Electronics

Latvia . 7,224 parts In-Stock

1+ parts

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7,224

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Microchip USA

USA . 6,855 parts In-Stock

1+ parts

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6,855

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Kulean Microsystems

USA . 5,939 parts In-Stock

1+ parts

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5,939

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Glotronic Ltd.

UK . 3,700 parts In-Stock

1+ parts

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100+ parts

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3,700

-

-

-

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Problanco Electronics

Mexico . 3,245 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,245

-

-

-

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Continental Prestige Electronics

USA . 1,350 parts In-Stock

1+ parts

-

100+ parts

$0.626

1k+ parts

-

10k+ parts

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1,350

-

$0.626

-

-

UHIMA Technologies

Türkiye . 827 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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827

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Overview

Power up your applications with the BUL642D2G by Onsemi, a high-quality Power Bipolar Junction Transistor designed to deliver optimal performance and efficiency. With Onsemi's reputation for reliability and innovation, you can trust that this NPN transistor with built-in diode will meet your power needs with ease. Whether you're working on industrial equipment, automotive systems, or consumer electronics, the BUL642D2G offers the value, benefits, and advantages you need to succeed. Upgrade your designs today and experience the difference with Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and enhances durability of the product.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile.

Configuration: SINGLE WITH BUILT-IN DIODE

Offers additional functionality with the built-in diode, reducing the need for external components.

Package Shape: RECTANGULAR

Easy to mount and work with due to its shape.

Maximum Power Dissipation (Abs): 75 W

Can handle high power loads without overheating, ensuring reliability.

Package Style (Meter): FLANGE MOUNT

Allows for easy and secure mounting of the transistor in various circuits.

Minimum DC Current Gain (hFE): 18

Provides sufficient current gain for effective signal amplification.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, suitable for various industrial applications.

Maximum Collector-Emitter Voltage: 440 V

Capable of handling high voltage levels, increasing its range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 3 A

Can carry high current levels, suitable for various power applications.

Terminal Finish: TIN

Provides good conductivity and corrosion resistance to the terminals.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during soldering processes, ensuring proper connections.

Nominal Transition Frequency (fT): 13 MHz

Offers good frequency response for signal amplification and switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL642D2G attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN EFFICIENT ANTISATURATION NETWORK

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

440 V

Minimum DC Current Gain (hFE):

18

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL642D2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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