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BUL67

STMicroelectronics

BUL67 by STMicroelectronics

BUL67 by STMicroelectronics is a NPN Power BJT with 400V VCE, 10A IC, and 1.5V VCEsat. Ideal for switching applications, it has a max power dissipation of 100W and operates up to 150 °C. With a hFE of at least 15, this transistor is designed for high-power requirements in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,913 parts In-Stock

1+ parts

-

100+ parts

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3,913

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Vyrian

USA . 2,353 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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2,353

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Anansix

USA . 1,418 parts In-Stock

1+ parts

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1,418

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 88 parts In-Stock

1+ parts

$0.840

100+ parts

-

1k+ parts

$0.756

10k+ parts

-

88

$0.840

-

$0.756

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MKK Technologies

India . 926 parts In-Stock

1+ parts

$1.579

100+ parts

-

1k+ parts

-

10k+ parts

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926

$1.579

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DigiPath Technology Company

USA . 926 parts In-Stock

1+ parts

$1.579

100+ parts

-

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-

926

$1.579

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Native Components

USA . 82 parts In-Stock

1+ parts

$10.090

100+ parts

-

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82

$10.090

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Northwest PG Solutions

USA . 2,103 parts In-Stock

1+ parts

$11.099

100+ parts

$9.989

1k+ parts

-

10k+ parts

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2,103

$11.099

$9.989

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Parana Technologies

USA . 1,344 parts In-Stock

1+ parts

-

100+ parts

$1.004

1k+ parts

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1,344

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$1.004

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Corphita

USA . 1,098 parts In-Stock

1+ parts

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1,098

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Overview

Experience the power of innovation with the BUL67 by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers high-quality Power Bipolar Junction Transistors that offer exceptional performance and reliability. Ideal for switching applications, this NPN transistor provides a maximum VCEsat of 1.5V and a maximum collector current of 10A, making it an excellent choice for a wide range of electronic projects. With a maximum power dissipation of 100W and a maximum operating temperature of 150 °C, the BUL67 ensures long-lasting durability and efficiency. Trust STMicroelectronics to provide you with cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it more reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor suitable for a wide range of electronic circuits.

Configuration: SINGLE

Simplified design with single configuration makes it easy to use in various circuit layouts.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in turning on and off electrical signals.

Maximum VCEsat: 1.5 V

Low saturation voltage helps reduce power consumption and heat dissipation in the circuit.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuit boards or systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and stability in circuit assembly.

No. of Terminals: 3

Simple three-terminal configuration for easy connectivity and compatibility with standard circuit layouts.

Maximum Power Dissipation (Abs): 80 W

High power dissipation capability allows for handling large amounts of electrical power without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides secure mounting in electronic systems or devices.

Maximum Power Dissipation Ambient: 100 W

Can withstand a high ambient temperature environment while maintaining efficient power dissipation.

Minimum DC Current Gain (hFE): 15

Reliable minimum current gain ensures stable amplification of electrical signals in the circuit.

Maximum Operating Temperature: 150 °C

Wide temperature range allows for operation in various environmental conditions without compromising performance.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating provides safety margin for handling high voltage signals in the circuit.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in semiconductor devices such as transistors.

Maximum Collector Current (IC): 10 A

High collector current rating allows for handling large current flows in the circuit without damage.

Maximum Turn Off Time (toff): 3380 ns

Fast turn off time ensures quick switching of the transistor, reducing switching losses and improving overall efficiency.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and conductivity for stable terminal connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit assembly and connectivity, making it easier to integrate into electronic systems.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL67 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

100 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

3380 ns

Maximum VCEsat:

1.5 V

Trade Compliance

BUL67 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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